SZBZX84B27LT1G Allicdata Electronics
Allicdata Part #:

SZBZX84B27LT1G-ND

Manufacturer Part#:

SZBZX84B27LT1G

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 27V 225MW SOT23-3
More Detail: Zener Diode 27V 225mW Surface Mount SOT-23-3 (TO-...
DataSheet: SZBZX84B27LT1G datasheetSZBZX84B27LT1G Datasheet/PDF
Quantity: 1000
6000 +: $ 0.05443
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 27V
Tolerance: --
Power - Max: 225mW
Impedance (Max) (Zzt): 80 Ohms
Current - Reverse Leakage @ Vr: 50nA @ 18.9V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Description

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SZBZX84B27LT1G Application Field and Working Principle

SZBZX84B27LT1G is a single Zener diode with a maximum allowable power dissipation of 500mW. It is a general purpose, low power, high surge current device. It is widely used in various applications, such as protection circuits, switching and signal circuits, radios and other digital devices.

A Zener diode is an electronic component that is used to regulate voltage within an electrical circuit. It works by allowing current to pass in one direction, while blocking current and voltage in the reverse direction. When the voltage on the device exceeds a particular level (called the breakdown or “Zener” Voltage) the device allows current to pass in both directions. This phenomenon is termed “avalanche breakdown”.

The Zener diode is a two-terminal semiconductor device, constructed from either a PN junction between two pieces of doped silicon or a PN junction between two pieces of silicon doped with different materials. This allows the device to regulate voltage by allowing current to flow in either direction, depending on the voltage applied. The device has an advantage over traditional bipolar junction transistors (BJTs) in that it can regulate voltage without requiring a current source. This is useful in many applications where a low voltage reference is required.

SZBZX84B27LT1G has a breakdown voltage of 83.3V, an operating temperature range of -65 to +175°C and a package size of 2.9X1.1X0.6mm. It is capable of handling maximum reverse current of 1mA. The device has a low dropout voltage (0.22V) and a high reverse voltage capability. It has an excellent reverse voltage response and low resistance, making it ideal for use in low power applications. Its low on-state voltage and high reverse current capabilities make it ideal for use in switching and protection circuits.

SZBZX84B27LT1G is a robust, reliable and cost effective diode, but it is important to ensure that the device is operated within its specified ratings. As with any semiconductor device, it is important to ensure that the device is not exposed to high levels of current or voltage and that the correct current and voltage ratings are observed.

The specific data is subject to PDF, and the above content is for reference

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