SZBZX84C39ET1G

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	39V
Tolerance:	±5%
Power - Max:	225mW
Impedance (Max) (Zzt):	130 Ohms
Current - Reverse Leakage @ Vr:	50nA @ 27.3V
Voltage - Forward (Vf) (Max) @ If:	900mV @ 10mA
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	BZX84C39

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Introduction to SZBZX84C39ET1G

SZBZX84C39ET1G, a type of single zener diode, is a semiconductor device having a low breakdown voltage and reverse breakdown voltage characteristics. It is developed and produced by the STMicroelectronics corporation.

Design and Working Principle

The device consists of a P-N junction, which is made of a grounded anode electrode and a positive cathode electrode. In a standard zener diode, the voltage bias is applied in such a way that the current is reversed, creating a low impedance between the anode electrode and the cathode electrode. When the applied voltage exceeds the breakdown voltage, the junction capacitance quickly diverges. This produces a current that is proportional to the breakdown voltage, allowing the Zener diode to limit the voltage on the junction area. The breakdown voltage of the SZBZX84C39ET1G is 4.7V. This is a relatively low breakdown voltage. The Zener diode operates in a reverse bias mode, which means that when the applied voltage across the junction exceeds the breakdown voltage, the PN junction provides an elecromotive force that establishes equilibrium and reduces the current flow. This enables the device to consistently regulate voltage fluctuations, eliminating the need for over-voltage protection circuits.

Electrical Characteristics of SZBZX84C39ET1G

The SZBZX84C39ET1G has a maximum power dissipation at its junction of 350mW with a maximum reverse voltage of 7V. The peak forward voltage drop is 0.8V with a reverse current leakage of 2μA. This provides protection against the most common types of current spikes caused by the sudden load increase.The device also has a low temperature coefficient of 10.3mV/°C and a capacitance of 5.5pF at 1kHz For its corresponding junction area, the life time reliability is excellent, with a minimum reverse voltage of 4.7V. The Zener diode also has a low forward voltage drop of 0.8V, which is ideal for applications that require low power consumption.

Application Field of SZBZX84C39ET1G

The SZBZX84C39ET1G is mainly used in a variety of electronic circuits such as over voltage protection, voltage stabilization, voltage supervision, and other applications for which low-voltage protection is necessary.The SZBZX84C39ET1G is an ideal choice for sensitive electronic applications, as it has a long life time, low leakage current, and low forward voltage drop. For instance, it can be used in the protection of circuits in the automotive and industrial control industries, as well as in commercial audio and telecommunications devices and computer power supplies.Another application for the SZBZX84C39ET1G is in voltage clamping circuits. The Zener diode acts as a voltage regulator, allowing precision control and protection of the circuits it is connected to. This is especially beneficial when controlling critical parameters such as flow, pressure, and temperature.

Conclusion

The SZBZX84C39ET1G is a special type of single zener diode, which is primarily used to protect sensitive circuits in a variety of applications. It has a low breakdown voltage, low forward voltage drop, and excellent reliability. This makes it suitable for use in the automotive, industrial control, telecommunication, and computer power supply industries. Thanks to its low leakage current, it is also suitable for voltage clamping, voltage stabilization, and voltage supervision applications.

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