T72H1245B4DN

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Voltage - Off State:	1.2kV
Voltage - Gate Trigger (Vgt) (Max):	3V
Current - Gate Trigger (Igt) (Max):	150mA
Voltage - On State (Vtm) (Max):	2.3V
Current - On State (It (AV)) (Max):	450A
Current - On State (It (RMS)) (Max):	700A
Current - Off State (Max):	35mA
Current - Non Rep. Surge 50, 60Hz (Itsm):	7500A @ 60Hz
SCR Type:	Standard Recovery
Operating Temperature:	-40°C ~ 125°C
Mounting Type:	Stud Mount
Package / Case:	SC-20, Stud
Supplier Device Package:	T-72

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<h2>Thyristors - SCRs</h2>A Thyristor – also known as a Silicon Controlled Rectifier (SCR) – is a type of semiconductor device that uses the ability of the device to control electric current. They are usually made of four-layer p-type and n-type semiconductor materials, which are connected in a set of rectifiers and switches.<h3>T72H1245B4DN application field and working principle</h3>The T72H1245B4DN is a commonly used, hydrated, unipolar, SCR-controlled rectifiers, characterized by small dissipation and high current rectification capacity. This device has a wide range of applications, such as lighting, invert load control and heating systems; it is especially suited for controlling power supply and charging systems.The T72H1245B4DN is a four-layer p-type, hydrated thyristor. The layers are interconnected in an anode-gate-cathode structure with a reverse-biased PN junction. In normal operating conditions, a small external voltage applied to the gate will allow current flow between the anode and the cathode.The forward breakover voltage of the T72H1245B4DN is adjustable through the external gate voltage. By setting a value below the breakdown voltage, current will not flow through the device. However, if the voltage applied to the gate is greater than the breakdown voltage, the thyristor will switch to the on-state and allow current to flow through the device.In the cut-off state, the anode and the cathode of the T72H1245B4DN are not conducting. The application of a negative voltage to the gate induces a reverse current from the gate to the cathode, and this current absorbs the stored charge, turning the thyristor off.In addition, the device has its own holding current, i.e., the minimum gate current at which it will remain on until the applied gate voltage is equal to zero. This is also known as the gate-hold current.Furthermore, this device has a negative temperature coefficient which means that the gate current requirements increases with rising temperatures. The temperature coefficient of the device should be taken into consideration while designing the system.In summary, the T72H1245B4DN is a four-layer p-type, hydrated SCR-controlled rectifier which offers excellent device characteristics like improved current flow, high current rectification capacity, adjustable forward breakover voltage, and a negative temperature coefficient. Its wide range of applications makes it suitable for use in various industries.

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