T9K7280803DH

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Thyristors - SCRs

A thyristor is a semiconductor device which is used as a switch or linear current regulator and is available in a number of different configurations. Of these, the silicon controlled rectifier (SCR) is the most popular form. The SCR is constructed with a PNPN four layer structure by combining two PN junction diodes and two NPN transistors. When forward biased, the SCR can be switched instantaneously between its forward blocking and its reverse conducting state by applying a small voltage to its control terminal.

The T9K7280803DH is an SCR developed by Toshiba, and is suitable for high power applications. This SCR features a reverse voltage capability of 800V, a forward current rating of 280A, and a storage temperature range of -40 to +140°C. It is available in a DO-4 hermetically sealed package and is designed for long-term reliable operation.

In its forward blocking state, the SCR acts as an open circuit and does not allow current to flow. It is only when the control gate is triggered that the SCR switches from the blocking to the conducting state, allowing current to flow from the anode to the cathode. This triggering can be achieved using a low power signal derived from an external circuit.

The forward conduction of the SCR also produces a voltage drop across the junction, which can be used to regulate the output voltage of the device. In this mode, the SCR is said to be operating in its linear region. The load current and voltage are controlled by the input gate voltage, allowing the current and voltage to be adjusted as required.

When DC power applications require a rapid, efficient switching, the SCR is the device of choice. Its fast turn-on and turn-off response time and its ability to control high currents with low power signals make it an ideal choice for a wide range of switching and voltage regulation tasks. The T9K7280803DH is specifically designed for high power applications and offers superior performance and reliability.

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