TBAT54A,LM Allicdata Electronics
Allicdata Part #:

TBAT54ALMTR-ND

Manufacturer Part#:

TBAT54A,LM

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: DIODE SCHOTTKY 30V 100MA SOT23
More Detail: Diode Array 1 Pair Common Anode Schottky 30V 100mA...
DataSheet: TBAT54A,LM datasheetTBAT54A,LM Datasheet/PDF
Quantity: 21000
3000 +: $ 0.02362
6000 +: $ 0.02130
15000 +: $ 0.01852
30000 +: $ 0.01667
75000 +: $ 0.01482
150000 +: $ 0.01235
Stock 21000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA
Speed: Small Signal =
Reverse Recovery Time (trr): 1.5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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Diodes are divided into two main categories: rectifiers and arrays. Rectifiers and arrays are electrical devices used to convert alternating current (AC) to direct current (DC). Consequently, rectifier and array diodes are used in a variety of applications such as power control, energy conversion, and signal regulation. One type of rectifier diode is a TBAT54A, which is commonly used for high-power applications. In addition, a Light-activated Array (LM) diode is a specialized version of a regular AD array and is used for applications where Lighting Voltage control is necessary.

A TBAT54A is a type of metal-oxide semiconductor (MOS) field-effect transistor (MOSFET). The device consists of a source and a drain with a metal oxide layer between them. The conductivity of the device is determined by the metal oxide layer and the electric field formed between the source and the drain. Additionally, the location of the metal oxide layer determines the voltage drop between the source and the drain. Application of a positive gate voltage on the gate terminal drives the MOSFET into conduction and thus allow current to flow between source and drain. A TBAT54A typically requires an operating voltage of 20V to 265V and peak current of up to 1000A. Common applications for TBAT54A range from switching power supplies and motor control to voltage stabilization and protection against high voltage and current transients.

A Light-activated Array (LM) diode is a specialized version of a regular AD array feature a light-activated gate switch. It is typically used in applications that require Lighting Voltage control such as light dimmers, neon sign boards, and traffic light controllers. The LM diode consists of a P-type substrate, two N-type regions for the source and the drain, and a light-activated gate. When a light source is applied, the gate switch is activated and the current conduction between source and drain is changed. This is achieved by the light source changing the threshold voltage of the gate. Most LM diodes require a minimum light source of 5m W/cm² and work best with a light source intensity of 15-18m W/cm².

In summary, a TBAT54A and LM diodes are widely used in the electronics industry for power control, energy conversion and signal regulation. They are classified under the broad category of rectifiers and arrays.TBAT54A is a MOSFET diode with a voltage range of 20V to 265V and peak current up to 1000A. Eit is commonly used for high-power applications such as switching power supplies and motor control. On the other hand, an LM diode is a specialized version of an AD array with a light-activated gate. It is typically used in applications that require lighting control such as light dimmers, neon sign boards, and traffic light controllers.

The specific data is subject to PDF, and the above content is for reference

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