Allicdata Part #: | TC1411EOA713-ND |
Manufacturer Part#: |
TC1411EOA713 |
Price: | $ 0.63 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC MOSFET DVR 1A HS INV 8SOIC |
More Detail: | Low-Side Gate Driver IC Inverting 8-SOIC |
DataSheet: | TC1411EOA713 Datasheet/PDF |
Quantity: | 1000 |
3300 +: | $ 0.57103 |
Logic Voltage - VIL, VIH: | 0.8V, 2V |
Base Part Number: | TC1411 |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 25ns, 25ns |
Input Type: | Inverting |
Current - Peak Output (Source, Sink): | 1A, 1A |
Series: | -- |
Voltage - Supply: | 4.5 V ~ 16 V |
Gate Type: | N-Channel, P-Channel MOSFET |
Number of Drivers: | 1 |
Channel Type: | Single |
Driven Configuration: | Low-Side |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TC1411EOA713 is a PMIC – Gate Drivers, which is widely used in integrated power systems. It features pin-compatible replacements of legacy gate drivers that enable high-density, low-power designs in applications that require the highest levels of EMI/EMC. This device provides high level of functionality and flexibility in a small package.
The TC1411EOA713 is a dual-channel gate driver with an integrated level-shifter, enabling connections from TTL logic to power MOSFETs and IGBTs. It is designed to control the switching times of high-voltage MOSFETs and other high-power semiconductor devices. The TC1411EOA713 is designed for use in high-voltage applications such as those used in inverter applications, high-power LED drivers, and dc-dc converters. Additionally, the device features over-voltage, over-temperature, reverse-voltage protection, allowing it to protect the power MOSFET/IGBTs in fault conditions.
One of the unique features of the TC1411EOA713 is its integration of a low-side level-shifter. This low-side level-shifter works in conjunction with the other components of the device to reduce the in-rush current when switching from low to high current configurations. This is because the low-side level-shifter can precisely adjust the signal voltage for switching between low to high states, allowing for optimized use of the integrated power MOSFETs and IGBTs.
The TC1411EOA713 provides high-speed switching and includes an adjustable slew rate which can be adjusted to the required level with no external components needed. This allows the device to easily be turned up or down to meet the needs of the application. This device also includes a power-on reset circuit to ensure the gate driver is operated in the safe operating zone at all times.
In addition to its fast switching capability and integrated protections, the TC1411EOA713 has improved thermal characteristics. These improve the overall efficiency of the power delivery solutions and can help reduce thermal cycling which can lead to reduced reliability of the power delivery solution.
Finally, the TC1411EOA713 can be used in applications that require protection from electrostatic discharge. The device is designed to protect itself from electrostatic voltages up to 8kV, which is a significant improvement over prior products in this space.
In conclusion, the TC1411EOA713 is a highly reliable gate driver PMIC that is designed for both high-current and high-voltage applications. It includes an integrated low-side level-shifter and can be used in various conditions and applications. Additionally, the device features an adjustable slew rate and improved thermal characteristics, which can lead to improved overall power delivery efficiency.
The specific data is subject to PDF, and the above content is for reference
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