TC1411NEOA

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The TC1411NEOA is a high-efficiency gate-driver IC for high-side and low-side FET applications with integrated robustness protection. It is able to drive N-Channel and P-Channel MOSFETs, as well as SiC MOSFETs and paralleled MOSFETs with independent gate drives for fast switching. This makes the TC1411NEOA the perfect choice for high-speed switching PFC, LLC Resonant converters, battery chargers, and multi-phase motor drives.

The device has four external pins that control the low-side drive: a power source pin (Vreg), a Gate pin (G), a high-side drive pin (SD), and a Enable pin (EN). Vreg and G control the gate micro-charging voltage, while SD and EN control the high-side drive of the low-side FETs. The device supports two PWM input modes, PWM Mode 1 and PWM Mode 2, along with the ability to be driven by either the PWM input or independent control. In PWM Mode 1, the TC1411NEOA is powered from VCC and the duty-cycle of the PWM input is directly proportional to the voltage level of the Vreg and G pins. The device can be configured to synchronize with the PWM input, however, it can also be configured to work independently.

The TC1411NEOA features excellent protection features, such as short-circuit protection, auto-recovery, over-current and over temperature protection, as well as an internal microcontroller that monitors the FETs and maintains a constant switching frequency of up to 2MHz independently of the duty cycle of the PWM input. The device also features a slew-rate control function, which helps to reduce EMI noise. Additionally, the device includes open-drain gate control outputs, allowing for flexible gate configurations.

The TC1411NEOA is a highly integrated gate-driver IC with an extensive range of features. Its combination of fast switching speeds, robust protection, independent control and open-drain gate control outputs makes it an ideal solution for high power, high-speed switching applications.

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