TC2320TG-G Discrete Semiconductor Products |
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Allicdata Part #: | TC2320TG-GTR-ND |
Manufacturer Part#: |
TC2320TG-G |
Price: | $ 0.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N/P-CH 200V 8SOIC |
More Detail: | Mosfet Array N and P-Channel 200V Surface Mount ... |
DataSheet: | TC2320TG-G Datasheet/PDF |
Quantity: | 404 |
3300 +: | $ 0.71768 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 7 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 110pF @ 25V |
Power - Max: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
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The TC2320TG-G is a monolithic 10-transistor transistor array with a variety of applications in which high speed switching performance is needed. It consists of two five transistor arrays arranged in parallel to form a 10-transistor array. Each transistor is individually controlled, allowing for the careful control of the circuit.
The TC2320TG-G offers the ability to use high performance, high switching speed transistors for high speed switching with low to no power losses. The transistors used in the array are high frequency transistors, essentially allowing for switching of currents at frequencies up to 100MHz, making it an ideal solution for power relays, and other high frequency operations. Additionally, it offers high-speed switching while still providing low-power consumption which makes it suitable for portable applications.
The TC2320TG-G transistor array provides very low on-resistance, which allows for fast switching and low power dissipation. It also provides a higher breakdown voltage than what is often seen in other transistor arrays, allowing for higher currents to be driven using lower power supplies. Additionally, the higher breakdown voltage also allows for greater flexibility in the applications of the device, since higher drive voltages are possible.
The operation of the TC2320TG-G transistor array is relatively simple. When a signal is applied to the gate of the transistor, either through an external source or through a voltage source, it changes the conductivity of the transistor channel, allowing for current to flow from the drain to the source, or from the source to the drain. When the gate voltage is removed, the element returns to its off-state, and no current is allowed to flow through it. In this way, the array operates similarly to other transistor arrays, allowing for high speed operation and high speed switching.
The TC2320TG-G is a versatile device that is used in many applications. It is suitable for use as power relays, as well as in power controllers, switching power supplies, and even as a logic element in electronic circuits. Additionally, the array could also be used in high power applications, such as in motor controls, where the high speed switching capabilities of the transistor array make it ideal.
In general, the TC2320TG-G transistor array offers excellent switching performance with low power loss, high speed operation, and a wide variety of applications. For these reasons, it is a popular choice for many applications in which high-speed switching and high performance are needed.
The specific data is subject to PDF, and the above content is for reference
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