TC4423EPA

Logic Voltage - VIL, VIH:	0.8V, 2.4V
Base Part Number:	TC4423
Supplier Device Package:	8-PDIP
Package / Case:	8-DIP (0.300", 7.62mm)
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 150°C (TJ)
Rise / Fall Time (Typ):	23ns, 25ns
Input Type:	Inverting
Current - Peak Output (Source, Sink):	3A, 3A
Series:	--
Voltage - Supply:	4.5 V ~ 18 V
Gate Type:	N-Channel, P-Channel MOSFET
Number of Drivers:	2
Channel Type:	Independent
Driven Configuration:	Low-Side
Part Status:	Active
Packaging:	Tube

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PMIC - Gate Drivers: TC4423EPA Application Field and Working PrincipleThe TC4423EPA is a gate driver used for MOSFETs and IGBTs from Microchip. It is a part of the company’s Total Charge Management (TCM) family of products. The device consists of two high-speed power output buffers and two integrated charge pumps. It is designed to provide a low-noise, high-speed switching solution that helps to improve the efficiency, reduce system noise and improve system thermal performance. The TC4423EPR supports both single- and dual-channel power outputs. The integrated level-shift circuitry ensures that each power output can toggle between high and low logic levels, while also providing maximum output current capability. In addition to providing an efficient power output, the TC4423EPA also provides a sophisticated protection mechanism. The integrated logic circuitry provides protection against over-voltage, under-voltage and over-temperature conditions. The integrated driver circuitry also provides a fault-protection feature that helps to prevent system failures due to power misdirection. The device is used for driving MOSFETs and IGBTs in an array of switching applications in a variety of environments. These applications include motor control, LED display, and other power control applications. The TC4423EPA has a typical response time of less than 2 nanoseconds, making it well-suited for high-speed switching applications. It also supports a variety of logic levels and modes, including pulse-width modulation (PWM) and pulse-frequency modulation (PFM). The device can operate on a single supply voltage or can be powered by dual supply voltages. The TC4423EPA also supports a variety of I/O options, including open-drain outputs, TTL-level inputs, and inverted and non-inverted I/O options. The TC4423EPA has a 50 mA source and 500 mA sink output. This makes it capable of driving a wide range of loads and helping to reduce system dissipation and heat generation. The TC4423EPA works according to the basic principle of charge transfer. The two integrated charge pumps are used to convert the input voltage into a pulse that are then applied to the power outputs. The power outputs can then be switched between high and low logic levels by applying the appropriate voltage levels to the input and control terminals. The device also provides a sophisticated fault protection feature that helps to prevent system failure due to power misdirection. Overall, the TC4423EPA is an efficient gate driver for driving MOSFETs and IGBTs and provides a reliable and low-noise solution. It is well-suited for use in a variety of switching applications and can help to improve system efficiency, reduce system noise and improve system thermal performance.

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