| Allicdata Part #: | TC4425EPA-ND |
| Manufacturer Part#: |
TC4425EPA |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Microchip Technology |
| Short Description: | IC MOSFET DVR 3A DUAL HS 8-DIP |
| More Detail: | Low-Side Gate Driver IC Inverting, Non-Inverting 8... |
| DataSheet: | TC4425EPA Datasheet/PDF |
| Quantity: | 1000 |
| Logic Voltage - VIL, VIH: | 0.8V, 2.4V |
| Base Part Number: | TC4425 |
| Supplier Device Package: | 8-PDIP |
| Package / Case: | 8-DIP (0.300", 7.62mm) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Rise / Fall Time (Typ): | 23ns, 25ns |
| Input Type: | Inverting, Non-Inverting |
| Current - Peak Output (Source, Sink): | 3A, 3A |
| Series: | -- |
| Voltage - Supply: | 4.5 V ~ 18 V |
| Gate Type: | N-Channel, P-Channel MOSFET |
| Number of Drivers: | 2 |
| Channel Type: | Independent |
| Driven Configuration: | Low-Side |
| Part Status: | Active |
| Packaging: | Tube |
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PMIC - Gate Drivers are devices that contribute to the control of various types of power transistors. The TC4425EPA, one of the available gate drivers from Texas Instruments, is a popular choice for a wide array of power systems. In this article, we discuss the application field and working principle of the TC4425EPA.
Application Field
The TC4425EPA is designed for use in a wide range of power systems, including those involving MOSFETs and IGBTs operating at frequencies ranging from 10kHz to greater than 1MHz. It also is suitable for use with a range of power supplies, including those running between 4.5 and 24 volts. The device is capable of driving loads up to 700mAh.
The TC4425EPA is designed to operate in temperatures ranging from -40°C to +150°C, making it suitable for extreme temperature environments. It is also resistant to voltage and current spikes, making it highly dependable. The device is ESD-protected, ensuring reliable performance.
The TC4425EPA features a low power mode, allowing it to operate on a single supply voltage and draw only 1 mA. This reduces power consumption and allows for a more efficient power system design. Additionally, the device features a controlled GND pin that limits the EMI noise emitted for greater safety.
Working Principle
The TC4425EPA utilizes Pulse Width Modulation (PWM) technology to control the power supplied to the desired output device. This allows for precise control of the power output, ensuring smoother operation and improved efficiency. Additionally, the device features internal logic circuitry to allow the user to determine the required gate mechanism.
The TC4425EPA integrates a dual MOSFET driver and a logic block. The logic block permits the conversion of CMOS, TTL, or voltages as low as 1.5V into standard gate activation signals. The device also features an adjustment pin to provide additional control of the output voltage. This allows for high precision and precise control of the output.
The TC4425EPA incorporates protective circuitry to guard against short circuits and overloads. This provides added reliability and protection for the system. Additionally, the device can be operated in the lock-out mode, disabling all device operations.
The TC4425EPA also features a variety of output configurations such as dual poles with opposite rotation, dual poles with same rotation, single pole, and a dual output with a dead-time setting. These configurations further enhance the versatility of the device and provide greater flexibility for control of the power system.
In summary, the TC4425EPA is a reliable and versatile gate driver that is suitable for a wide range of power systems. Featuring the latest technologies, the device provides precise control and protection while offering improved efficiency and reduced power consumption. Its adjustable outputs, protective circuitry, and wide temperature range makes it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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TC4425EPA Datasheet/PDF