Allicdata Part #: | TC4425VMF-ND |
Manufacturer Part#: |
TC4425VMF |
Price: | $ 0.95 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC MOSFET DVR 3A DUAL HS 8DFN |
More Detail: | Low-Side Gate Driver IC Inverting, Non-Inverting 8... |
DataSheet: | TC4425VMF Datasheet/PDF |
Quantity: | 1000 |
300 +: | $ 0.86304 |
Logic Voltage - VIL, VIH: | 0.8V, 2.4V |
Base Part Number: | TC4425 |
Supplier Device Package: | 8-DFN-S (6x5) |
Package / Case: | 8-VDFN Exposed Pad |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 23ns, 25ns |
Input Type: | Inverting, Non-Inverting |
Current - Peak Output (Source, Sink): | 3A, 3A |
Series: | -- |
Voltage - Supply: | 4.5 V ~ 18 V |
Gate Type: | N-Channel, P-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Independent |
Driven Configuration: | Low-Side |
Part Status: | Active |
Packaging: | Tube |
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Gate drivers are used in a variety of PMIC (Power Management IC) applications. They are designed to provide high-efficiency control and protection for power components by managing the operating states of the power switch. The TC4425VMF is a power management IC designed for use in non-isolated switching power supplies. This article will discuss the application field and working principle of the TC4425VMF.
The TC4425VMF is a monolithic high-speed MOSFET driver with high dv/dt immunity. It is designed to drive N-Channel MOSFETs and can be used in a variety of applications including step down, buck/boost, flyback, half/full bridge, DC-DC and AC-DC converters. It can be used in a variety of applications owing to its low supply current and high output current. The TC4425VMF is an advanced protection feature that can be used to safely drive both N-Channel and P-Channel MOSFETs. It also offers soft-start, over-current, over-voltage and under-voltage protection.
The TC4425VMF features an integrated charge pump to eliminate the need for external components. This reduces the overall cost and size of the design. The charge pump is designed to provide up to 18V of drain-source voltage for driving the MOSFET. It also features a wide operating range from -5V to 18V, enabling the device to be used in a variety of applications. Additionally, the TC4425VMF features a high-speed switching frequency of up to 500kHz for increased efficiency and reduced size of the power stage.
The working principle of the TC4425VMF is based on an internal charge pump. When current is applied to the gate of the FET, the charge pump will increase the drain-source voltage and turn the FET on. The TC4425VMF also includes integrated protection features that will protect both the FET and the power device from overvoltage, overtemperature, and undervoltage conditions. The device also provides soft start and over-current protection that can be used to protect the power stage from premature failure.
The TC4425VMF is designed for use in a variety of power management applications. Its low supply current and high output current makes it ideal for high-efficiency power supply designs and it can be used in step down, buck/boost, flyback, half/full bridge, DC-DC and AC-DC converters. Its integrated protection features ensure safe operation of the power device, while its high-speed switching frequency makes it suitable for high-efficiency designs.
In conclusion, the TC4425VMF is a cost-effective, high-efficiency MOSFET driver with integrated protection features. It is suitable for use in a variety of power management applications, including non-isolated switching power supplies. Its low supply current and high output current make it ideal for high-efficiency designs and its integrated protection features ensure safe operation of the power stage. Additionally, its high-speed switching frequency makes it suitable for high-efficiency power supply designs.
The specific data is subject to PDF, and the above content is for reference
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