TC4427AEOA

Logic Voltage - VIL, VIH:	0.8V, 2.4V
Base Part Number:	TC4427A
Supplier Device Package:	8-SOIC
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Rise / Fall Time (Typ):	25ns, 25ns
Input Type:	Non-Inverting
Current - Peak Output (Source, Sink):	1.5A, 1.5A
Series:	--
Voltage - Supply:	4.5 V ~ 18 V
Gate Type:	N-Channel, P-Channel MOSFET
Number of Drivers:	2
Channel Type:	Independent
Driven Configuration:	Low-Side
Part Status:	Active
Packaging:	Tube

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:<h2>PMIC - Gate Drivers</h2><p>Gate drivers are an essential component of power management integrated circuits (PMICs), providing the interface between the higher voltage power supplies and the system logic. Specifically, PMICs use gate drivers to regulate the voltage that is applied to the gate of the power component, such as a MOSFET. The TC4427AEOA is a dual gate driver from Microchip that can be used to simplify the design of power systems and reduce component count. In this article, we will discuss the application field and working principle of the TC4427AEOA.</p><h3>The Application Field</h3><p>The TC4427AEOA is designed to drive the gates of MOSFETs, IGBTs, and high- and low-side driver circuits in high-power applications. It is especially suited for microprocessor-controlled power conversion, motor control, and general-purpose switching applications. The device has an operating voltage range of 4.5 to 18 V and is capable of driving loads up to 2.5 A. It includes logic level shunts to reduce losses in a high-side/low-side configuration and also has internal pull-down and open-drain outputs to reduce power dissipation.</p><p>The TC4427AEOA features an internal charge pump to generate a higher gate drive voltage than that of the logic supply. This reduces the power dissipation of the MOSFET/IGBT by allowing a lower logic voltage-level control, while achieving a higher gate drive voltage. The device also includes a low RDS(ON) gate charge transistor to ensure that the MOSFETs/IGBTs do not latch up, even under the most adverse conditions. This makes it suitable for use in harsh environments where temperature and vibration can affect the system.</p><h3>The Working Principle</h3><p>The TC4427AEOA has a dual-channel, complementary output configuration that includes two common-emitter connected transistors, a logic-level input, and an open-drain fault output. When the logic-level input is at logic “high,” the complementary transistors are in an active-high state, resulting in the outputs being in an active-low state. When the logic-input is at logic “low,” the complementary transistors are in an active-low state, resulting in the outputs being in an active-high state.</p><p>The internal charge pump proprietary to the TC4427AEOA allows the device to generate a higher gate voltage than the logic supply voltage, which can reduce the power dissipation of the MOSFETs/IGBTs. The device also includes a low RDS(ON) gate discharge transistor that eliminates the need for a logic-level switch. The device includes a fault output pin that goes low when an overvoltage or undervoltage condition is detected. The fault input can be used to shut down the driver or alert the system if the device is experiencing an overvoltage or undervoltage condition. This can reduce the risk of damage to the MOSFETs/IGBTs.</p><p>The TC4427AEOA is a dual gate driver that is designed to simplify the design of power systems and reduce component count. It is capable of driving MOSFETs and IGBTs in high-power applications and uses an internal charge pump to generate a high gate voltage while maintaining a low logic supply voltage. It also includes a low RDS(ON) gate charge transistor to prevent MOSFET/IGBT latching and a fault output pin to alert the system of any overvoltage or undervoltage conditions.</p>

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