TC4467COE Allicdata Electronics
Allicdata Part #:

TC4467COE-ND

Manufacturer Part#:

TC4467COE

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC MOSFET DVR QUAD NAND 16SOIC
More Detail: Low-Side Gate Driver IC Inverting 16-SOIC
DataSheet: TC4467COE datasheetTC4467COE Datasheet/PDF
Quantity: 1078
Stock 1078Can Ship Immediately
Specifications
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Base Part Number: TC4467
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 15ns, 15ns
Input Type: Inverting
Current - Peak Output (Source, Sink): 1.2A, 1.2A
Series: --
Voltage - Supply: 4.5 V ~ 18 V
Gate Type: N-Channel, P-Channel MOSFET
Number of Drivers: 4
Channel Type: Independent
Driven Configuration: Low-Side
Part Status: Active
Packaging: Tube 
Description

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The TC4467COE is a power management integrated circuit (PMIC) from Microchip Technology and falls into the category of gate drivers. This low-side MOSFET gate driver IC offers improved performance in a small, efficient package. The TC4467COE is a low impedance, low gate charge driver, which is suitable for a variety of applications in the automotive, industrial and consumer markets.

The TC4467COE includes an input buffer, an output stage, a power-on reset (POR) circuit, an undervoltage lockout (UVLO) circuit and a thermal shutdown. The IC also has a slew rate control circuit that inhibits the slew rate of the output during startup. The IC is offered in a SOIC-8 package with a footprint of 2.54mm x 4.90mm.

In terms of its application field, the TC4467COE can be used in driver circuits for automotive and industrial data processing systems. It can also be used in barrier modules and in controlled switching systems. It is ideal for controlling MOSFETs used in high current applications, such as automotive lighting and motors, as well as in power supplies, battery chargers and LED drivers.

The working principle of the TC4467COE is based on the principles of PMICs. It is an integrated circuit in which power management functions are combined into a single device. The IC incorporates an external power MOSFET to reduce switching noise. The IC uses the power MOSFET to reduce the power wastage in the device during high side switching and to reduce the risks of over-voltage and thermal stresses on the MOSFET. The device also has an output stage that is capable of driving high-side MOSFETs and low-side MOSFETs in a controlled manner.

The TC4467COE is designed to be able to handle a wide voltage range and is capable of driving up to 17A in peak current pulses. It is designed to meet the stringent requirements of the automotive and industrial markets, while offering high performance and low power consumption.

Overall, the TC4467COE is an ideal solution for applications that require low voltage and high current switching. It offers superior performance, low power consumption and a small package size, making it perfect for applications in the automotive, industrial and consumer markets.

The specific data is subject to PDF, and the above content is for reference

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