TC6215TG-G Discrete Semiconductor Products |
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Allicdata Part #: | TC6215TG-GTR-ND |
Manufacturer Part#: |
TC6215TG-G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N/P-CH 150V 8SOIC |
More Detail: | Mosfet Array N and P-Channel 150V Surface Mount ... |
DataSheet: | TC6215TG-G Datasheet/PDF |
Quantity: | 3300 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 150V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 120pF @ 25V |
Power - Max: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Description
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TC6215TG-G Application Field and Working Principle
The TC6215TG-G belongs to the TC6215 series of high-voltage, high dV/dt, fast-switching controlled avalanche rectifiers manufactured by ROHM Semiconductor. It is designed for applications such as DIP switches, thermostats, and motor control. This general-purpose rectifier can handle reverse-bias voltages from 7 to 15 V with current levels between 100 and 200 mA. The TC6215TG-G contains two high-voltage rectifiers in a thermally-enhanced SMD package, with a maximum junction temperature of 175℃. The controlled avalanche diodes offer a low forward voltage of 0.9V and high reverse breakdown voltage of 6V. In addition, the device features tight ESD protection and low capacitance in order to ensure stability and reliability in a wide range of applications.The TC6215TG-G is built with a patented high-voltage MOSFET array. This array contains four MOSFETs connected in a source group, with each MOSFET being connected to the supply voltage via a resistor. Each of the MOSFETs is then connected to an input terminal and the drain output terminal.The MOSFET array offers several benefits over traditional diodes such as higher current-handling capabilities and greater performance. In addition, the device is able to provide a fast switching and improved EMI performance. The device has a high-speed switching time of 250ns, making it suitable for applications such as motor control.When the device is turned on, the MOSFET array is activated and the high-voltage MOSFETs in the array start to conduct. This allows the current to flow in the desired direction and turn the device ON. When the device is turned OFF, the MOSFETs are turned off and stop conducting. The current then ceases to flow and the device is turned OFF.The device is ideal for applications that require high-speed switching and low voltage drop, such as automotive applications and switching power supplies. Its low forward voltage and high reverse breakdown voltage make it suitable for applications that require low power dissipation, such as low-voltage battery powered devices.In conclusion, the TC6215TG-G is a high-voltage, high dV/dt, fast-switching controlled avalanche rectifier with tight ESD protection and low capacitance. The device is ideal for applications such as DIP switches, thermostats, and motor control, and offers a wide range of benefits over traditional diodes. Its high-speed switching time and low voltage drop make it an ideal choice for a variety of applications.The specific data is subject to PDF, and the above content is for reference
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