TC7920K6-G

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TC7920K6-G application field and working principle

The TC7920K6-G is an advanced power MOSFET ARRAY developed by Toshiba Corporation. It is a high-performance device that uses Toshiba\'s proprietary UTLP (Ultra Thin Low-k) process technology. It integrates a number of semiconductor devices, such as NMOS transistors and PMOS transistors, into a single package. It is widely used in power management systems, power converters, and motor drives.

Features

The TC7920K6-G features a wide voltage range from 2.6V to 32V, high power conversion efficiency and low on-resistance. It is capable of up to 6A output current and up to 19W power handling per pair. This MOSFET ARRAY also features a wide frequency bandwidth for good high-frequency operation and a low gate capacitance to reduce turn-on and turn-off delays. In addition, it has an integrated improved charge pump circuit for lower operating voltage.

Applications

The TC7920K6-G is widely used in power management, power converters and motor driving applications. Its wide voltage range and high power conversion efficiency makes it ideal for power management and switching power supply applications. It is often used in automotive, renewable energy, industrial control and lighting applications. The low on-resistance of this MOSFET ARRAY also makes it suitable for HF and low impedance designs.

Working Principle

The TC7920K6-G works on the principle of MOSFET. A MOSFET is a metal-oxide-semiconductor field-effect transistor that uses a metal gate to control the flow of current through a channel created between source and drain. It is controlled by the voltage applied to the gate, which allows it to act like a switch. The TC7920K6-G uses a combination of NMOS and PMOS transistors, both of which are key components of modern CMOS integrated circuits.

The TC7920K6-G MOSFET ARRAY is designed for high-performance, high-frequency operation and is a popular choice for power management, power conversion and motor control applications. It provides excellent thermal performance and is ideal for applications requiring wide voltage range and low on-resistance. Its low gate capacitance and improved charge pump circuit make it suitable for high frequency and low impedance designs, making it the perfect choice for a variety of applications.

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