Allicdata Part #: | 497-4440-5-ND |
Manufacturer Part#: |
TD351IN |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | STMicroelectronics |
Short Description: | IC DRIVER GATE IGBT/MOSFET 8DIP |
More Detail: | High-Side Gate Driver IC Non-Inverting 8-DIP |
DataSheet: | TD351IN Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Logic Voltage - VIL, VIH: | 0.8V, 4.2V |
Base Part Number: | TD351 |
Supplier Device Package: | 8-DIP |
Package / Case: | 8-DIP (0.300", 7.62mm) |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 100ns, 100ns (Max) |
Input Type: | Non-Inverting |
Current - Peak Output (Source, Sink): | 1.3A, 1.7A |
Series: | -- |
Voltage - Supply: | 12 V ~ 26 V |
Gate Type: | IGBT, N-Channel MOSFET |
Number of Drivers: | 1 |
Channel Type: | Single |
Driven Configuration: | High-Side |
Part Status: | Obsolete |
Packaging: | Tube |
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The TD351IN is an integrated system-side gate driver that has been designed to reduce external components, improve circuit reliability, and provide high drive current. This gate driver is suitable for use in a range of power management IC (PMIC) applications, particularly those that require the driving of insulated gate bipolar transistors (IGBTs), field effect transistors (FETs), and other power semiconductor switches. This article will provide an overview of the TD351IN’s application field and working principle.
Overview of TD351IN
The TD351IN is a high-speed, low-side IGBT/MOSFET gate driver designed for use in power management IC applications. It features a wide common mode range of 11V to 29V and a built-in charge pump to supply the higher gate drive voltage (+15V max.). It also features a slew rate of 20V/ns, providing fast switching times. Furthermore, the TD351IN is capable of providing up to 14A peak current and up to 10A average current. It is configured with two common source outputs and can drive both N-channel and P-channel FETs.
Application Field
The TD351IN is best suited for use in applications that require high-speed switching and the driving of insulated gate bipolar transistors (IGBTs), field effect transistors (FETs), and other power semiconductor switches. Some of the typical applications include: motor control, solar inverters, power supplies, motor drives, and industrial automation. It is particularly well-suited for applications requiring a high degree of noise immunity and a large common mode range.
Working Principle
The TD351IN is configured with two source outputs that can be used to drive both N-channel and P-channel FETs. When the circuit is initially powered up, one source output is connected to the gate of the FET, and the other output is connected to Vcc. When a logic signal is applied to the gate driver’s input, the output is enabled, which causes the FET to turn on. As current passes through the FET, the source of the FET is pulled to a lower voltage, thus allowing the other source output to provide a positive gate drive voltage to the FET’s gate. In this way, the TD351IN is able to provide current-sense feedback and provide fast switching operations.
Conclusion
The TD351IN is a high-speed, low-side IGBT/MOSFET gate driver designed for PMIC applications. Its wide common mode range of 11V to 29V, integrated charge pump, and high peak and average current drive capabilities make it ideal for applications requiring high-speed switching and high noise immunity. It is particularly suitable for powering insulated gate bipolar transistors (IGBTs), field effect transistors (FETs), and other power semiconductor switches.
The specific data is subject to PDF, and the above content is for reference
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