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Memory

TE28F128J3D75B TR is a memory module developed by Triple-E, a prominent developer of NAND flash storage solutions. This device is an 8-bit dual-NAND Flash memory controller, featuring a five-bit on-board error correction code (ECC), a thermal monitoring circuit, and a high-reliability low-power soft-macro NAND Flash memory architecture. It was designed to help customers quickly and cost-effectively develop and deploy applications requiring reliable non-volatile data storage.

Application Field

The TE28F128J3D75B TR can be used for a variety of applications that require reliable non-volatile memory such as automotive safety, avionics, gaming, industrial control, military, mobile/portable devices, robotics, and secure data storage. It is ideal for applications with high storage density and a need for applications with a large number of erase cycles. For example, the TE28F128J3D75B TR is ideal for automotive and industrial applications due to its high data retention capabilities, low power consumption, and overall cost-effectiveness.

Working Principle

The TE28F128J3D75B TR is a high-performance NAND Flash memory controller with a Dual NAND Flash architecture, enabling the support of multiple NAND Flash implementations. The device utilizes an Advanced Interrupt Integration (AII) module and ECC algorithm to ensure that data stored on the device is reliable and always accessible. The device also features a thermal monitoring circuit to detect temperature changes in the operation environment and to provide reliability information to the system.

The TE28F128J316D75B TR operates on a 32-/ 16-bit asynchronous bus interface that is capable of providing low power consumption (40-mW in active mode and 12-mW in sleep mode) and high performance (that is capable of transferring data at higher speeds). The device has four different programming types which are available to support several operating modes. The TE28F128J316D75B TR supports both NOR and NAND flash memories, making it versatile for most application types and ensuring efficient integration in existing systems.

The device can support up to 8-bit error correction code (ECC), providing superior data reliability. The on-chip ECC function also stores five extra bits of data for every 512 bytes, providing additional protection for application data. In addition, the Advanced Read Performance (ARP) feature offers faster read speeds and supports write speeds of up to 15 MB/s.

The TE28F128J316D75B TR provides a secure environment by preventing access to the memory by unintended parties. This secure environment helps protect data stored in the device against malicious or unintended access attempts through physical tampering or unauthorized software. The device also supports multiple power saving modes, allowing customers to easily optimize system performance and power consumption.

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