TE28F256P30T95A Allicdata Electronics
Allicdata Part #:

TE28F256P30T95A-ND

Manufacturer Part#:

TE28F256P30T95A

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 256M PARALLEL 56TSOP
More Detail: FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 40...
DataSheet: TE28F256P30T95A datasheetTE28F256P30T95A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 95ns
Base Part Number: 28F256P30
Supplier Device Package: 56-TSOP (14x20)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7 V ~ 2 V
Memory Interface: Parallel
Access Time: 95ns
Series: StrataFlash™
Clock Frequency: 40MHz
Memory Size: 256Mb (16M x 16)
Technology: FLASH - NOR
Memory Format: FLASH
Memory Type: Non-Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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TE28F256P30T95A chip is a 256Mb/ 32M x 8 memory device in the SuperFlash® E Series technology. It is a Non-Volatile Memory (NVM) chip, with two different sets of array architecture, giving customers a choice to choose between simultaneously erasing entire chip or erasing individual blocks, according to their application requirements. It is made of single power supply (1.8V +10%), for low voltage operation and is supported with standard JEDEC and structured programming algorithms.

The TE28F256P30T95A operates with a wide temperature range from -40ºC to + 85=ºC, making it suitable for some military and space applications. It features a small form factor of 33ball BGA and a VID input to support fractional power consumption to reduce power consumption. It also features an Erase verify, for read/write protection and a proprietary Voltage Trap architecture for very Low Erase/ program Disturb.

The working principle of the TE28F256P30T95A is that it stores data o-bits wide words within memory cells, linked in a 2D array of "rows" and "columns". This data is programmed, or set, through the application of one or more electrical signals to the row and column structure, which has been designated as a program source. Data can be stored as either a logic "0" or "1" with no in-between logic levels possible.

To erase or read the memory data on the TE28F256P30T95A chip, the voltage must be applied on the chip package API. If a user wants to erase the content, the API must be set to the highest voltage level. However, if a user only needs to read the content, the API needs to be set to the lower voltage level.

The applications for the TE28F256P30T95A chip are vast, including embedded systems such as automotive and industrial. It can also be used for data storage applications in distinct sectors such as wireless communication devices, PC peripherals, cellular phones, and portable electronic products. For embedded applications, the chip can be used to store program code, data storage and control functions in a wide variety of system applications. In the specific case of the automotive sector, the chip is used to support the storage and control of increasingly complex automotive functions.

In conclusion, the TE28F256P30T95A chip is a 256Mb/ 32 M x 8 NVM chip, providing users with a choice between simultaneously erasing entire chip or erasing individual blocks, according to their application requirements. With its low voltage operation, wide temperature range and small form factor, the TE28F256P30T95A chip is suitable for many different applications from automotive, industrial to data storage devices. It is also supported with standard JEDEC and structured programming algorithms.

The specific data is subject to PDF, and the above content is for reference

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