TE28F128P30B85A

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The TE28F128P30B85A is an 8 MB Flash memory device housed in a TSOP package. It is the first member in Micron\'s TE28 family of products, featuring the Standard Single-Level Cell (SLC) NAND Flash. TE28F128P30B85A offers a reliable, high performance data storage solution, providing superior read/write performance, and long product life. Utilizing the industry\'s latest NAND Flash process, the TE28F128P30B85A is designed with up to 8-bit serial data I/O and 8-bit parallel data I/O. This device is available in an 8-pin to 48-pin package, depending on the feature set.

The TE28F128P30B85A memory device is designed for the consumer and embedded space, which offers superior performance and special features. This device is ideal for consumer handheld device such as digital camera, MP3 players, and industrial applications such as bar code readers, asset tracking systems, and industrial automation.

The TE28F128P30B85A utilizes Micron\'s advanced NAND Flash technology, which provides superior endurance, reliability, and read/write performance. The device provides a wide range of features such as support for 8-bit parallel, 8-bit serial operations, 4BIT ECC, thirty-twobyte pages, support for multiple interleaving, and a wide range of data management features. This device is designed for the consumer and embedded space and is ideal for consumer handheld devices such as digital cameras, personal digital assistants (PDAs), personal media players, and industrial applications such as bar code readers and asset tracking systems.

In terms of working principle, NAND Flash memory is based on the NAND logic gate, which is a logic device that requires both high and low logic levels to change its state. A data storage device consists of a number of memory cells connected in a matrix. Each cell records one bit of data and consists of three parts: the control gate, the floating gate and the drain. The control gate is connected to the word line, while the floating gate is connected to the bit line. When a word line is high, it charges the control gate and causes electrons to flow from the drain to the floating gate.

When the word line is low, the charge stored on the floating gate is re-established by moving electrons from the drain back to the floating gate. This process is known as programming and is used to store information on a NAND Flash memory device. To read a single bit of data, the word line is temporarily set high, which causes the cell to discharge a bit of charge that indicates whether it contains a zero or a one. This process is known as erasing and is used to read information from a NAND Flash memory device.

The TE28F128P30B85A offers the highest levels of performance, endurance, and reliability for industrial embedded applications, as well as for consumer handheld devices. This device also features a range of features such as support for 8-bit parallel, 8-bit serial operations, 4-bit ECC, thirty-two-byte pages, support for multiple interleaving, and a wide range of data management features. The device utilizes a TSOP package to deliver a reliable, high performance data storage solution.

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