Allicdata Part #: | TF202THC-5-TL-H-ND |
Manufacturer Part#: |
TF202THC-5-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 1MA 100MW VTFP |
More Detail: | JFET N-Channel 1mA 100mW Surface Mount 3-VTFP |
DataSheet: | TF202THC-5-TL-H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0): | 210µA @ 5V |
Current Drain (Id) - Max: | 1mA |
Voltage - Cutoff (VGS off) @ Id: | 200mV @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | 3.5pF @ 5V |
Power - Max: | 100mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, Flat Leads |
Supplier Device Package: | 3-VTFP |
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TF202THC-5-TL-H is a type of junction field-effect transistor (JFET). These transistors are mainly used in high-frequency circuits and switching applications. JFETS are mainly nitride-based transistors that have a gate that is surrounded by N or P-type material. The switching action depends on the voltage applied to the Gate terminal, which then controls the current flow through the Drain and Source terminals. The TF202THC-5-TL-H transistor uses N-channel enhancement mode. The device can be used in both digital and analog circuits.
The TF202THC-5-TL-H device acts as a fast switch in both digital and analog circuits. It can also be used in amplifiers with high-frequency operation. The on-resistance (VERY LOW) of this transistor is relatively low, so it draws very low current through the gate and the peak-to-peak current is controllable. Since JFETs are voltage-controlled, they provide superior speed characteristics, making them well suited for high frequency applications.
The structure of the TF202THC-5-TL-H device consists of a Gate terminal and three other terminals: Drain, Source and Body. The Gate/Body terminal is surrounded by N-type material. During operation, the Gate controls a channel of electrons from the Drain to the Source. When the Gate is reversed-biased, the current through the channel is reduced, resulting in a decreased voltage drop across the Drain and Source terminals. There is a decrease in the on-state resistance (VERY LOW) when the Gate bias is increased.The drain–source current is mainly controlled by the voltage applied to the gate terminal. As the gate voltage increases, more electrons will flow through the channel, and the drain current will also increase. The source–drain current is also influenced by the gate–source voltage, as it affects the mobility of the carriers in the channel. The TF202THC-5-TL-H device is typically operated in combination with external resistors and capacitors to form an amplifier circuit.
This type of transistor has various advantages, such as higher input impedance, low noise and power consumption, and wide operating temperature range. In comparison to other available transistors, the TF202THC-5-TL-H transistor offers fast switching speed and high-frequency advantages. It is commonly used in switching applications as it can handle high voltage and current.
In summary, the TF202THC-5-TL-H transistor is a type of JFET specially designed for high frequency applications. Its structure and operation are based on the N-channel enhancement mode and the Gate terminal delivers current to the Drain and Source terminals, which is responsible for controlling the current flow. This device provides some advantages, such as low noise, low power consumption and wide operating temperature range, which makes it well suited for digital and analog applications.
The specific data is subject to PDF, and the above content is for reference
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