TF208TH-4-TL-H Allicdata Electronics
Allicdata Part #:

TF208TH-4-TL-H-ND

Manufacturer Part#:

TF208TH-4-TL-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 1MA 100MW VTFP
More Detail: JFET N-Channel 1mA 100mW Surface Mount VTFP
DataSheet: TF208TH-4-TL-H datasheetTF208TH-4-TL-H Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 2V
Current Drain (Id) - Max: 1mA
Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 2V
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: VTFP
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TF208TH-4-TL-H is a type of junction field effect transistor (JFET). It is composed of a semiconductor material with adjustable conductivity, control electrodes governing the number of available charge carriers, and source and drain electrodes. Understanding the application field and working principle of these components is important to their correct functioning.

The TF208TH-4-TL-H is typically used in a variety of applications, such as switch circuits, analog amplifiers, and power amplifiers. This particular component has a wide voltage range up to ±250 volts, making it suitable for use in higher voltage environments. Additionally, the component has a high power dissipation of up to 1.25 Watts, meaning it can be used in circuit applications requiring robust power handling.

JFETs are operated at the triode region, which makes them good devices for signal applications. The TF208TH-4-TL-H features a gate current of under 120 microamps and a cutoff current of over 2 milliamps. These characteristics ensure that the component maintains superior sonic performance at any signal level.

The component also has a dual polarity protection, which prevents damage caused by electrostatic discharge. This protective feature is especially useful in hostile electronic environments.

The operation of the TF208TH-4-TL-H is based on the principle of controlling source-drain current flow using the gate-source voltage. At rest, the junction between the source and drain will have an equilibrium between the minority and majority carrier concentrations. When a voltage is applied at the gate, it will create a depletion region by decreasing the number of available charge carriers. This narrowing of the conductive channel creates a resistance between the source and drain, thus offering the unique voltage-controlled operation that characterizes the JFET.

The TF208TH-4-TL-H is therefore an ideal component for signal applications. Its wide voltage range and power dissipation capabilities, along with its superior sonic performance and ESD protection, make this component well-suited for any circuit requiring adjustable signal control.

The specific data is subject to PDF, and the above content is for reference

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