
Allicdata Part #: | THGBMHG6C1LBAIL-ND |
Manufacturer Part#: |
THGBMHG6C1LBAIL |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Toshiba Memory America, Inc. |
Short Description: | IC FLASH 64G MMC 52MHZ 153WFBGA |
More Detail: | FLASH - NAND Memory IC 64Gb (8G x 8) MMC 52MHz 15... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | e•MMC™ |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 64Gb (8G x 8) |
Clock Frequency: | 52MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | MMC |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -25°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 153-WFBGA |
Supplier Device Package: | 153-WFBGA (11.5x13) |
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The memory device known as THGBMHG6C1LBAIL is one of the most popular, yet advanced, forms of dynamic RAM on the market today. This device is a 6-cell NAND Flash memory with a full-voltage process, which makes it ideal for use in a variety of embedded, portable and networking applications. While the memory device is highly popular among engineers and computer users alike, there are several key areas that need to be understood in order to fully understand and make use of the device.
The primary application field and working principle of the THGBMHG6C1LBAIL Dynamic RAM is based on the NAND architecture design. As with most NAND architectures, the device uses a combination of N-channel and P-channel transistors that are activated according to the logic state of internal address input and data output signals, in order to temporarily store data. This allows for the device to have a very fast read/write speed and to have a high density of memory cells in a given area. The device also offers a high erase/program cycle count, which means that the device is able to be used and reused an unlimited number of times.
In addition to its primary application field, the device is often used in storing and maintaining data in industrial, automotive and military applications. By using a combination of N-channel and P-channel transistors, the device is able to provide a fast, stable and reliable storage of data that can be quickly accessed and processed. Other applications include use with sensors, smart cards, digital money and remote sensing, among others. As such, the device\'s engineering applications are expansive, and the device is used in a wide variety of industries and applications.
The primary benefit of the device is its extremely low power consumption. This makes the device very efficient in terms of energy usage, making it the perfect choice for battery-powered applications. The device also offers a high level of endurance, due to its ability to be used and reused a high number of times. As well, the device offers excellent data retention capabilities, making it suitable for applications that require long-term data storage, such as safety-critical applications.
As such, the primary application field and working principle of the THGBMHG6C1LBAIL Dynamic RAM is both impressive and advantageous. Its NAND architecture design, combined with its fast read/write speed, low power consumption and high endurance make the device a must-have for a variety of engineering and computing applications. Its wide range of applications, combined with its low energy usage and high data retention capabilities make the device an excellent choice for a variety of industries and applications.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
THGBMHG6C1LBAIL | Toshiba Memo... | -- | 1000 | IC FLASH 64G MMC 52MHZ 15... |
THGBMHG6C1LBAWL | Toshiba Memo... | -- | 1000 | IC FLASH 64G MMC 52MHZ 15... |
THGBMHG9C4LBAIR | Toshiba Memo... | -- | 1000 | IC FLASH 512G MMC 153WFBG... |
THGBMDG5D1LBAIT | Toshiba Memo... | -- | 1000 | IC FLASH 32G MMC 52MHZ 15... |
THGBMHG8C4LBAWR | Toshiba Memo... | -- | 1000 | IC FLASH 256G MMC 153WFBG... |
THGBMHG9C8LBAWG | Toshiba Memo... | 0.0 $ | 1000 | IC FLASH 512G MMC 153WFBG... |
THGBMHG7C1LBAIL | Toshiba Memo... | -- | 1000 | IC FLASH 128G MMC 153WFBG... |
THGBMHG7C2LBAWR | Toshiba Memo... | -- | 1500 | IC FLASH 128G MMC 153WFBG... |
THGBMHG8C2LBAIL | Toshiba Memo... | -- | 1000 | IC FLASH 256G MMC 153WFBG... |
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