THGBMHG6C1LBAIL Allicdata Electronics
Allicdata Part #:

THGBMHG6C1LBAIL-ND

Manufacturer Part#:

THGBMHG6C1LBAIL

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Toshiba Memory America, Inc.
Short Description: IC FLASH 64G MMC 52MHZ 153WFBGA
More Detail: FLASH - NAND Memory IC 64Gb (8G x 8) MMC 52MHz 15...
DataSheet: THGBMHG6C1LBAIL datasheetTHGBMHG6C1LBAIL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: e•MMC™
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: --
Memory Interface: MMC
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-WFBGA
Supplier Device Package: 153-WFBGA (11.5x13)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The memory device known as THGBMHG6C1LBAIL is one of the most popular, yet advanced, forms of dynamic RAM on the market today. This device is a 6-cell NAND Flash memory with a full-voltage process, which makes it ideal for use in a variety of embedded, portable and networking applications. While the memory device is highly popular among engineers and computer users alike, there are several key areas that need to be understood in order to fully understand and make use of the device.

The primary application field and working principle of the THGBMHG6C1LBAIL Dynamic RAM is based on the NAND architecture design. As with most NAND architectures, the device uses a combination of N-channel and P-channel transistors that are activated according to the logic state of internal address input and data output signals, in order to temporarily store data. This allows for the device to have a very fast read/write speed and to have a high density of memory cells in a given area. The device also offers a high erase/program cycle count, which means that the device is able to be used and reused an unlimited number of times.

In addition to its primary application field, the device is often used in storing and maintaining data in industrial, automotive and military applications. By using a combination of N-channel and P-channel transistors, the device is able to provide a fast, stable and reliable storage of data that can be quickly accessed and processed. Other applications include use with sensors, smart cards, digital money and remote sensing, among others. As such, the device\'s engineering applications are expansive, and the device is used in a wide variety of industries and applications.

The primary benefit of the device is its extremely low power consumption. This makes the device very efficient in terms of energy usage, making it the perfect choice for battery-powered applications. The device also offers a high level of endurance, due to its ability to be used and reused a high number of times. As well, the device offers excellent data retention capabilities, making it suitable for applications that require long-term data storage, such as safety-critical applications.

As such, the primary application field and working principle of the THGBMHG6C1LBAIL Dynamic RAM is both impressive and advantageous. Its NAND architecture design, combined with its fast read/write speed, low power consumption and high endurance make the device a must-have for a variety of engineering and computing applications. Its wide range of applications, combined with its low energy usage and high data retention capabilities make the device an excellent choice for a variety of industries and applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "THGB" Included word is 9
Part Number Manufacturer Price Quantity Description
THGBMHG6C1LBAIL Toshiba Memo... -- 1000 IC FLASH 64G MMC 52MHZ 15...
THGBMHG6C1LBAWL Toshiba Memo... -- 1000 IC FLASH 64G MMC 52MHZ 15...
THGBMHG9C4LBAIR Toshiba Memo... -- 1000 IC FLASH 512G MMC 153WFBG...
THGBMDG5D1LBAIT Toshiba Memo... -- 1000 IC FLASH 32G MMC 52MHZ 15...
THGBMHG8C4LBAWR Toshiba Memo... -- 1000 IC FLASH 256G MMC 153WFBG...
THGBMHG9C8LBAWG Toshiba Memo... 0.0 $ 1000 IC FLASH 512G MMC 153WFBG...
THGBMHG7C1LBAIL Toshiba Memo... -- 1000 IC FLASH 128G MMC 153WFBG...
THGBMHG7C2LBAWR Toshiba Memo... -- 1500 IC FLASH 128G MMC 153WFBG...
THGBMHG8C2LBAIL Toshiba Memo... -- 1000 IC FLASH 256G MMC 153WFBG...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics