THS9000DRDT RF/IF and RFID

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Frequency:	50MHz ~ 750MHz
P1dB:	20.6dBm
Gain:	15.9dB
Noise Figure:	4dB
RF Type:	Cellular, CDMA, TDMA, PCS
Voltage - Supply:	5.5V
Current - Supply:	100mA
Test Frequency:	350MHz
Package / Case:	6-VDFN Exposed Pad
Supplier Device Package:	6-VSON (2x2)

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RF Amplifiers

The THS9000DRDT is an RF amplifier with high power, low noise, fast speed, and excellent linearity. It is an ideal choice for high dynamic range amplifier applications. The dynamic range of the THS9000DRDT is up to ±115dBm, and it is able to operate over a wide temperature range (-40°C to +85°C). The amplifier has a wide frequency range, from 0.1MHz to 6GHz. It is suitable for use in a variety of fields, such as communication, radar, broadcasting, and medical systems.

Application Field

The THS9000DRDT is frequently used in industrial, telecommunications and scientific applications. It is especially well-suited to applications requiring a high level of linearity and dynamic range. It is also well suited for communication and radar systems which require low noise, high gain, high linearity, and a wide input power range. It is ideal for high gain antennas, filter amplifiers, front-end amplifiers, multimedia amplifiers, and transponders.

Working Principle

The THS9000DRDT amplifiers are based on a GaAs heterojunction bipolar transistor (HBT) design. This amplifier is able to utilize higher frequencies than conventional amplifiers, as well as having low noise and high linearity. This is achieved through the transistor\'s high breakdown voltage, wide frequency bandwidth and high gain.The HBT design allows for a higher gain-bandwidth product, allowing the THS9000DRDT to achieve a high power gain with low total harmonic distortion (THD). The gain of the amplifier is adjustable, allowing it to be used in a variety of applications. The amplifier also features a low-noise figure (NF), high-fidelity signal retaining capability, and high-impedance output port.The amplifier also features a wide dynamic range, reliable performance, and good linearity. It is also designed to be energy efficient, resulting in a low power consumption. The amplifier is also able to operate at temperatures ranging from -40°C to +85°C, making it suitable for a variety of applications.

Conclusion

The THS9000DRDT is a state-of-the-art RF amplifier designed to meet a wide range of industrial, telecommunications and scientific applications. Its high power, low noise, fast speed, and excellent linearity make it an ideal choice for high dynamic range amplifier applications. With its wide frequency range, adjustable gain, and low power consumption, the THS9000DRDT is an excellent choice for a variety of applications.

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