Allicdata Part #: | THS9000DRWR-ND |
Manufacturer Part#: |
THS9000DRWR |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | Texas Instruments |
Short Description: | IC CASCADEABLE AMP 400MHZ 6-SON |
More Detail: | RF Amplifier IC Cellular, CDMA, TDMA, PCS 50MHz ~ ... |
DataSheet: | THS9000DRWR Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Frequency: | 50MHz ~ 400MHz |
P1dB: | 20.6dBm |
Gain: | 15.9dB |
Noise Figure: | 4dB |
RF Type: | Cellular, CDMA, TDMA, PCS |
Voltage - Supply: | 5.5V |
Current - Supply: | 100mA |
Test Frequency: | 350MHz |
Package / Case: | 6-VDFN Exposed Pad |
Supplier Device Package: | 6-VSON (2x2) |
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The THS9000DRWR is a high powered GaN RF amplifier that can operate within the frequency range of 1.8 GHz to 2.2 GHz. It is a single-ended amplifier realized in a low-cost SOI technology. The transistor used in the THS9000DRWR is a GaN device and has been proven to offer excellent performance with high power efficiency.
The THS9000DRWR is designed and manufactured in a highly compact and integrated package. Its small form factor and low power consumption make it an ideal choice for applications in wireless infrastructure and automotive electronics. The amplifier operates with a single + 5V supply for continuous operation and can support higher output power through in-circuit thermal cycling.
As an RF amplifier, the THS9000DRWR is capable of providing an output power of up to 20 W for high-power applications. The amplifier is designed to provide an exceptionally low Noise Figure of less than 1.8 dB and an output 1 dB compression point of greater than 20W. These specifications make it suitable for applications that require low noise and high linearity, such as point-to-point radios, Wi-Fi, telephone, cellular infrastructure, and radar systems.
The THS9000DRWR amplifier utilizes a high-efficiency power supply to minimize power losses and reduce the amount of power wasted in its operation. This power supply design helps to reduce the size and cost of the amplifier. The amplifier also uses low inductance resistance and thermal tracing techniques to maintain performance over temperature and transistor current.
The working principle of the THS9000DRWR amplifier is based on the standard principle of voltage amplification. The amplifier uses a differential common-emitter amplifying circuit and has two input and two output stages. The input signals are applied to the base of both transistors and the multiple output stages are driven independently for improved linearity and power efficiency.
The THS9000DRWR RF amplifier is an ideal solution for applications that require high power, high efficiency, and low noise. The amplifier can be used in various wireless and electronics applications such as point-to-point radios, Wi-Fi, telephone, cellular infrastructure, and radar systems. The amplifier offers an exceptionally low Noise Figure of less than 1.8 dB and an output 1 dB compression point of greater than 20W. With its compact form factor and low power consumption, the amplifier is an ideal choice for wireless infrastructure and automotive electronics applications.
The specific data is subject to PDF, and the above content is for reference
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