TIG052TS-TL-E Allicdata Electronics
Allicdata Part #:

TIG052TS-TL-E-ND

Manufacturer Part#:

TIG052TS-TL-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 400V 8TSSOP
More Detail: IGBT 400V Surface Mount 8-TSSOP
DataSheet: TIG052TS-TL-E datasheetTIG052TS-TL-E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 5.5V @ 2.5V, 150A
Switching Energy: --
Input Type: Standard
Td (on/off) @ 25°C: --
Test Condition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Description

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The TIG052TS-TL-E belongs to a family of IGBTs (Insulated Gate Bipolar Transistors) that provide a range of robust, high-current, high-speed switching and linear amplification solutions. Often used in power electronics applications, it is also highly suitable for automotive and industrial motor control applications, offering superb temperature cycling capability and low propagation delay.The TIG052TS-TL-E is a high-current, single-phase IGBT with ultra-low turn-off saturation voltage and a wide range of operating conditions. Its metal-oxide-semiconductor (MOS) gate structure enables a high switching speed and efficiency. Due to its low on-state resistance and full MOS structure, it is more resistant to excess power loss than conventional bipolar junction transistors (BJTs). Therefore, the TIG052TS-TL-E is perfect for applications requiring high-power switching.

The TIG052TS-TL-E uses N-channel IGBT technology to switch high currents and voltages. The device consists of three main components: the gate driver, the body, and the collector. The gate driver allows the device to be switch from off to on or from on to off in a very fast time. The body of the device is made of an array of cells, each containing one P-Channel IGBT and one N-Channel JFET. The source of the JFET is tied to the source of the IGBT, and the collector of the IGBT is tied to the collectors of the cells.

The TIG052TS-TL-E is ideal for high-power applications, since it has a low-on-state resistance that allows it to switch high currents efficiently, resulting in reduced power losses. Furthermore, its ultra-low turn-off saturation voltage ensures a fast turn-off time. In addition, the device has a wide range of operating conditions with excellent temperature cycling capability.

In summary, the TIG052TS-TL-E IGBT is a high-current, single-phase device with excellent switching performance and a wide range of operating conditions. It is perfect for high-power applications where fast switching and low propagation delay are required. Its low-on-state resistance helps improve power efficiency, while its ultra-low turn-off saturation voltage ensures a fast turn-off time. In addition, its excellent temperature cycling capability makes it highly suitable for automotive and industrial motor control applications.

The specific data is subject to PDF, and the above content is for reference

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