TIG064E8-TL-H Allicdata Electronics
Allicdata Part #:

TIG064E8-TL-H-ND

Manufacturer Part#:

TIG064E8-TL-H

Price: $ 0.54
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 400V ECH8
More Detail: IGBT 400V Surface Mount 8-ECH
DataSheet: TIG064E8-TL-H datasheetTIG064E8-TL-H Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.49384
Stock 1000Can Ship Immediately
$ 0.54
Specifications
Vce(on) (Max) @ Vge, Ic: 7V @ 2.5V, 100A
Supplier Device Package: 8-ECH
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Test Condition: --
Td (on/off) @ 25°C: --
Input Type: Standard
Switching Energy: --
Series: --
Current - Collector Pulsed (Icm): 150A
Voltage - Collector Emitter Breakdown (Max): 400V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Transistors - IGBTs - SingleThe TIG064E8-TL-H is a type of Insulated Gate Bipolar Transistor (IGBT) commonly used in the switching industry. It is a high-power, high-speed device designed for medium voltage (MV) applications. The device is optimized for use in harsh environments such as automotive and industrial applications, and is suitable for various switching applications such as solenoid/valve actuation, motor drive, medium voltage drives, and inverters.An IGBT is a type of field-effect transistor that combines the low-voltage on-off capabilities of a standard transistor with the high-voltage capabilities of bipolar transistors. It is composed of four elements: an n-type gate, a p-type gate, an n-type base, and a gate-base capacitor. When a voltage is applied to the gate, it increases the conductivity of the n-type gate region, which in turn increases the conduction of the device. Conversely, when the gate voltage is cut off, the conductivity of the n-type gate region decreases and the conduction of the device decreases as well. The IGBT structure also has less leakage current than regular bipolar transistors. The TIG064E8-TL-H has a 600V blocking voltage and a 600V collecting voltage, and can support high speed switching with a 500kHz maximum frequency. It has a wide current range with a maximum collector current of 8A and a maximum emitter current of 8A. Additionally, it can operate at temperatures ranging from -40° C to 125° C and has a maximum power dissipation of power of 1.4W. The TIG064E8-TL-H is a popular device for use in applications such as solenoid/valve actuation, motor drives, medium voltage drives, and inverters. In solenoid/valve actuation, the TIG064E8-TL-H can be used in place of a relay to provide fast switching of the valves, allowing for precise and controlled operation. For motor drives, the device is ideal for controlling high current loads and features high switching speed for precise control. In medium voltage drives, the TIG064E8-TL-H can be used to reduce cost and improve efficiency, as well as reduce loss and increase reliability. In inverters, the high-speed switching capabilities of the TIG064E8-TL-H allow it to provide precise voltage and current regulation.The TIG064E8-TL-H is a versatile and reliable device for various switching applications in harsh and demanding conditions. Its ability to provide high-speed and high-power switching is ideal for a wide range of applications in the switching industry, making it an invaluable piece of technology.

The specific data is subject to PDF, and the above content is for reference

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