TIG058E8-TL-H

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Transistors - IGBTs - Single

The TIG058E8-TL-H is an Insulated Gate Bipolar Transistor (IGBT), produced by TOSHIBA as part of their EasyPACK™ family, which features a wide variety of isolated hermetic package types available.

This particular IGBT, a TIG058E8-TL-H, is an 800V, 58A, 8Mohm, NPT type module. It consists of two dies in a single package; the first die is an N-channel IGBT and the second an inverse diode.

This IGBT is suitable for a variety of applications where a large amount of power is needed to be switched, such as Electric Vehicles, Renewable Energy Energy Inverters, Server Power Supplies, Welders, and Switch Mode Power Supplies. It has a maximum continuous collector current rating of 58A and a maximum output current rating of 80A.

The working principle behind the IGBT is based upon the principle of "Gate-Controlled Switching." A gate voltage is applied to the IGBT\'s gate terminal to turn the IGBT leg control on. When the control is on, a large amount of current flows through the IGBT leg and produces high energy levels. The energy can be used to perform various operations such as controlling the speed of a motor, controlling the voltage of a DC-DC converter, etc.

The TIG058E8-TL-H is a popular choice for a variety of applications, due to its robust design, reliable operation, and good cost-performance ratio. It is also very easy to install and configure, making it a great choice for applications requiring quick and efficient setup.

In summary, the TIG058E8-TL-H is a highly regarded IGBT module suitable for many applications, including Electric Vehicles, Renewable Energy Energy Inverters, Server Power Supplies, Welders, and Switch Mode Power Supplies. It has a robust design, reliable operation, and good cost-performance ratio, making it a popular choice for many users.

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