TIS75_D26Z Allicdata Electronics
Allicdata Part #:

TIS75_D26Z-ND

Manufacturer Part#:

TIS75_D26Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 30V 0.35W TO92
More Detail: JFET N-Channel 30V 350mW Through Hole TO-92-3
DataSheet: TIS75_D26Z datasheetTIS75_D26Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 800mV @ 4nA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Resistance - RDS(On): 60 Ohms
Power - Max: 350mW
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: TIS75
Description

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The TIS75_D26Z is a type of junction field-effect transistors (JFETs). These transistors allow for electric current flow from one source to another, while also simultaneously controlling the power or voltage-dependent resistance of the device. They are extremely important components in electronic circuits and used in a wide range of applications from audio amplifiers to generators. In this article, we will discuss the application field and working principle of the TIS75_D26Z.

The TIS75_D26Z consists of three terminals, a gate, a source, and a drain. The difference between a JFET and a BJT transistor is that the latter has an additional base terminal whereas the former does not. The way this transistor works is by controlling the electric field in the vicinity of the gate terminal. As the voltage on the gate terminal increases, the electric field near the gate increases, which reduces the resistance between the source and drain. On the other hand, if the voltage on the gate terminal decreases, the electric field near the gate decreases, thus increasing the resistance between the source and drain. This is the basis of the operation of the TIS75_D26Z.

The TIS75_D26Z is used in a variety of applications, such as in audio amplifiers, oscillators, television receivers, generators, and amplifiers for wireless networks. It is also used as a switch or gate to enable or disable certain functions or devices in an electronic circuit. In addition to this, it is used for voltage and current rectification in power supplies.

In terms of its working principle, the TIS75_D26Z works by creating a conducting channel between the source and drain terminals, depending on the voltage applied to the gate terminal. When the gate voltage is positive compared to the source, the channel is created, allowing electric current flow to the drain terminal, and vice versa. This field-controlled current flow is what provides the functionality that allows a JFET to be used in such a wide range of applications.

In conclusion, the TIS75_D26Z is a type of junction field-effect transistor that can be used in a variety of applications, allowing current flow between its source and drain terminals, depending on the voltage applied to the gate terminal. It is an essential component for many electronic devices and can be used for voltage and current rectification in power supplies or as a switch or gate for specific functions.

The specific data is subject to PDF, and the above content is for reference

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