TIS75_J35Z Allicdata Electronics
Allicdata Part #:

TIS75_J35Z-ND

Manufacturer Part#:

TIS75_J35Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 30V 0.35W TO92
More Detail: JFET N-Channel 30V 350mW Through Hole TO-92-3
DataSheet: TIS75_J35Z datasheetTIS75_J35Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 800mV @ 4nA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Resistance - RDS(On): 60 Ohms
Power - Max: 350mW
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: TIS75
Description

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The TIS75_J35Z JFET is a depletion mode transistor designed to be used as a switch or a linear gain amplifier. It has achieved immense popularity as a low-cost electronic component used in a wide range of applications. This article will discuss the application field and working principle of the device.

Application Field: The TIS75_J35Z JFET is a small signal, low-noise, high-frequency switching transistor with low-capacitance leakage. It is valued for its ability to accurately and efficiently switch low-level analog signals, making it highly sought after in applications where signal switching without distortion is important. It is frequently used in audio amplifiers, transimpedance amplifier circuits, instrumentation amplifier circuits, and various other analog signal applications. As the low capacitance leakage of the device enables the construction of low-noise designs, the device is also useful in communication circuitry and spectrometer applications. It is a solid choice for an inexpensive and effective solution in a variety of analog applications.

Working Principle: The TIS75_J35Z JFET comprises a channel formed between the two "source" and "drain" terminals in a semiconductor material. An 8-pin plastic or metal enclosure houses the device and provides access to the control gate terminal. The gate terminal, as the name suggests, is used to control the flow of current between the source and drain terminals. When biased externally the current between the source and the drain can be controlled directly by the gate terminal, with a resulting change in the device\'s saturation current at the drain terminal. The level of bias applied to the gate determines what is known as the "gate to source voltage". The threshold voltage, also known as the "pinch-off voltage", is the point at which all current flow is completely shut off, resulting in the device entering a state of pinch-off, and effectively turning it into a switch. This positive or negative voltage can be controlled with the application of the appropriate bias voltage, allowing the device to switch quickly and accurately.

In summary, the TIS75_J35Z JFET is a versatile and cost-effective switching and amplifying transistor. Its low noise characteristics and high accuracy make it an ideal device for a range of applications, including audio amplifiers, instrumentation amplifier circuits, and spectrometers. The low-capacitance leakage of the device makes it invaluable in low-noise applications where accurate signal switching is a requirement. Its working principle of applying a control gate voltage to switch current flow between the source and drain terminals makes it an effective and reliable switch for a number of settings.

The specific data is subject to PDF, and the above content is for reference

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