TIS93_J35Z Allicdata Electronics
Allicdata Part #:

TIS93_J35Z-ND

Manufacturer Part#:

TIS93_J35Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 40V 0.8A TO-92
More Detail: Bipolar (BJT) Transistor PNP 40V 800mA 625mW Thro...
DataSheet: TIS93_J35Z datasheetTIS93_J35Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Power - Max: 625mW
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Description

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Transistors are electrical devices used to amplify and switch electrical signals, and the TIS93_J35Z is a type of single Bipolar Junction Transistor (BJT). In this article a detailed explanation of the TIS93_J35Z application field and working principle is discussed.

Background

Bipolar Junction Transistors (BJTs) are one of the three basic types of transistors. They are available in two types, NPN and PNP. BJT transistors are less commonly used than FETs (field effect transistors), however they can still be found in some applications. The TIS93_J35Z is a NPN type BJT and is used in various applications as a power switch, amplifier, or as a logic level transistor.

TIS93_J35Z Application Field

The TIS93_J35Z is a small-signal NPN BJT specifically designed for use in industrial grade power supplies, audio amplifiers, and DC motor control applications. It is also suitable for use in medical electronics. The TIS93_J35Z can handle larger currents than other small signal applications as it has a collector current rating of 6 A and a continuous collector power dissipation of 70 W. It can also handle higher voltages as it has an emitter-base voltage rating of 6 V.

TIS93_J35Z Working Principle

The TIS93_J35Z works in the same manner as any other BJT transistor, utilizing the base-emitter and collector-emitter junctions. As current flows through the base-emitter junction, it creates a voltage drop across the junction. This voltage drop creates a current through the collector-emitter junction, allowing for current flow between the collector and emitter. The voltage and current between the base-emitter and collector-emitter junctions can then be used to control the amount of current that flows through the collector-emitter path. This allows for a certain amount of current to be diverted away from the collector-emitter path, allowing for a controlled amount of current to flow, either increasing or decreasing the current based on the controlling voltage.

Conclusion

The TIS93_J35Z is a type of single BJT that is suitable for applications requiring higher current handling capabilities. The junction between the base-emitter and collector-emitter allows for current flow to be controlled through the collector-emitter path, allowing it to be used as a power switch, amplifier, or logic level transistor. It is suitable for industrial grade power supplies, audio amplifiers, and DC motor control applications, as well as medical electronics.

The specific data is subject to PDF, and the above content is for reference

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