TIS97_J35Z

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TIS97_J35z is classified under transistors-bipolar (BJT)-single. It is a NPN transistor with a wide range of useful applications. This transistor is best suited for use in high power switching applications and voltage regulation.

TIS97_J35z offers superior performance when compared to other regular NPN transistors. It has a wide voltage range (up to 1000V) and a current range from 2 A to 10A, which makes it ideal for various types of power switching, control, and PWM applications. Its low on-state resistance of 0.4 Ohms makes it suitable for high frequency switching and for use in audio amplifiers.

The transistor is designed with a three layer dielectric material between the emitter collector interface, which provides improved thermal and breakdown voltage performance. Furthermore, the device is designed with high-voltage insulation, which makes it suitable for use in high voltage applications such as solenoid driver, high voltage DC relay, HVDC, and more.

The working principle of the TIS97_J35z is similar to other NPN transistors. An electric current flows through the base-emitter junction, which triggers an internal switching mechanism, allowing electrons to flow from the emitter to the collector. The collector is connected to the load, and can be used to amplify the current or apply a voltage to the load.

In addition to the high voltage performance, the TIS97_J35z also provides high current capability, making it suitable for use in high power switching applications. It also has high switching speed, making it ideal for speed-sensitive control applications. The transistor can also be used in low-noise applications, since it has low junction capacitance and low thermal resistance.

Overall, the TIS97_J35z is a versatile device that can be used for various high power and high voltage applications. It has a wide voltage and current range, and provides superior thermal and breakdown voltage performance. It is therefore ideal for use in speed-sensitive applications and for audio amplification.

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