Allicdata Part #: | TISP4300M3BJR-ND |
Manufacturer Part#: |
TISP4300M3BJR |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Bourns Inc. |
Short Description: | SURGE SUPP 230V BIDIR DO-214AA |
More Detail: | N/A |
DataSheet: | TISP4300M3BJR Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
Voltage - Breakover: | 300V |
Voltage - Off State: | 230V |
Voltage - On State: | 3V |
Current - Peak Pulse (8/20µs): | 220A |
Current - Peak Pulse (10/1000µs): | 50A |
Current - Hold (Ih): | 150mA |
Number of Elements: | 1 |
Capacitance: | 83pF |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Description
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Thyristors - TVS
The TISP4300M3BJR thyristor is a special device, specifically designed for applications in power switching, freewheeling and brake control. This thyristor is capable of short circuit operation while also having a high surge tolerance capabilities. It is commonly used in applications such as motor drives, UPS systems, server power supplies, battery chargers, welding machines, and inverters.The TISP4300M3BJR consists of a gate terminal, cathode terminal, and anode terminal. It also contains several internal elements such as a thyristor junction, a reverse-bias junction, and a heavily doped P-N junction. The P-N junction is used to eliminate the gate voltage needed for switching.The TISP4300M3BJR operates by utilizing the conduction of electrons across the heavily doped P-N junction when a voltage potential is applied. When the gate voltage is applied, a current flow is established across the thyristor junction. This allows the current to flow across the terminals and the device will be on. When the voltage across the terminals is removed, the thyristor is turned off.The key feature of the TISP4300M3BJR is its ability to handle high current levels with efficient operation. Its high voltage breaking capacity allows it to carry more current at one time, while its low on-state voltage requirements provide additional power savings. It also has a reverse recovery time of 10 to 25 nanoseconds, making it excellent for use in high switching and current applications.The TISP4300M3BJR is most commonly used in power switching and freewheeling applications, along with being used in brake control circuits in various machines and equipment. It is also used in the production of UPS, server power supplies, and motor drives. Overall, the TISP4300M3BJR is a very reliable and efficient diode-like device. It is used extensively in power and current switching applications and its high voltage breaking capacity makes it ideal for such operations. Its low on-state resistance makes it suitable for power savings and along with its reverse recovery time, it is capable of high speed operations. It is an extremely versatile device that is sure to provide reliable operation and excellent performance in applications where these features are required.
The specific data is subject to PDF, and the above content is for reference
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