TLP5751(D4,E Allicdata Electronics
Allicdata Part #:

TLP5751(D4E-ND

Manufacturer Part#:

TLP5751(D4,E

Price: $ 1.82
Product Category:

Isolators

Manufacturer: Toshiba Semiconductor and Storage
Short Description: OPTOISO 5KV 1CH GATE DRIVER 6SO
More Detail: 1A Gate Driver Optical Coupling 5000Vrms 1 Channel...
DataSheet: TLP5751(D4,E datasheetTLP5751(D4,E Datasheet/PDF
Quantity: 118
1 +: $ 1.65690
10 +: $ 1.46916
25 +: $ 1.09015
125 +: $ 0.94802
250 +: $ 0.85322
500 +: $ 0.75842
1000 +: $ 0.65177
2500 +: $ 0.61622
5000 +: $ 0.59252
Stock 118Can Ship Immediately
$ 1.82
Specifications
Current - Output High, Low: 1A, 1A
Approvals: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15 V ~ 30 V
Current - DC Forward (If) (Max): 20mA
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Series: --
Rise / Fall Time (Typ): 15ns, 8ns
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Voltage - Isolation: 5000Vrms
Number of Channels: 1
Technology: Optical Coupling
Part Status: Active
Packaging: Tube 
Description

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The TLP5751 is a high-speed, high isolation GaA-DIB (Gallium Arsenide) isolator device. It is designed for use in applications where a high degree of isolation between electronic circuits is required. This device consists of a series of two p-type and two n-type GaAs field effect transistors (FET). The two p-type FETs are arranged in an E-MOS diode configuration and the two n-type FETs are arranged in a sink-D-MOS configuration.

Gate Drivers are devices that drive and control the gates of field effect transistors (FETs). FETs are utilized in a wide range of applications. They offer excellent speed and power efficiency compared to traditional bipolar junction transistors (BJT) and other switching devices such as relays. FETs require a driving signal in order to open and close their gates. This driving signal is provided by a Gate Driver.

The TLP5751 from Toshiba is a high-speed, high isolation GaA-DIB (Gallium Arsenide) isolator device. It is an ideal choice for use as a Gate Driver for applications which require a high degree of isolation between electronic circuits. The device consists of two p-type and two n-type GaAs FETs. One p-type FET is connected in an E-MOS diode configuration, while the other p-type FET is connected to ground. The two n-type FETs are connected in a sink-D-MOS configuration.

The TLP5751 is suitable for use in switching power supplies, automobiles, uninterruptable power supplies (UPS), and various other industrial and consumer electronics applications. It features a low switch on resistance of approximately 0.3 ohms to reduce power dissipation and thereby reduce heat generation and noise. It is also controlled by the TTL/CMOS compatible signal and has excellent noise immunity with high glitch-free operation.

The TLP5751 isolator is a high-performance, high isolation, and feature-rich device. It utilizes a clamped pin structure to reduce its maximum operating surge voltage and has an isolation voltage of up to 5000VDC. It is also RoHS compliant and has a UL (Underwriters Laboratories) and TUV (Technical Underwriters Laboratories) safety rating. Additionally, the device is re-flow soldering capable.

In summary, the Toshiba TLP5751 is a high-speed, high isolation GaA-DIB (Gallium Arsenide) isolator device designed for use in applications which require a high level of isolation between electronic circuits. It is suitable for use as a Gate Driver for various types of power supplies, automobiles, UPSs, and various other industrial and consumer electronic applications, featuring a low switch on resistance and excellent noise immunity. Finally, it is RoHS compliant and has UL and TUV safety ratings.

The specific data is subject to PDF, and the above content is for reference

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