Allicdata Part #: | TLZ4V7B-GS08-ND |
Manufacturer Part#: |
TLZ4V7B-GS08 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 4.7V 500MW SOD80 |
More Detail: | Zener Diode 4.7V 500mW Surface Mount SOD-80 MiniM... |
DataSheet: | TLZ4V7B-GS08 Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 4.7V |
Tolerance: | -- |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 25 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | SOD-80 MiniMELF |
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The TLZ4V7B-GS08 is a diode, single Zener diode specifically designed for application in low voltage, low power switching circuits, where space is of the essence. Zener diodes are used to regulate the voltage applied to a circuit and protect it from overvoltage. When an overvoltage is applied to a Zener diode, it will conduct the current and dissipate it, thus protecting the circuit from overvoltage.
The TLZ4V7B-GS08 diode is specifically designed to resistor regulate voltages of up to 4.7 volts. It features a maximum power dissipation of 500mW and reverse leakage current of 0.2mA. It has an operating temperature range between -65 and 175°C, making it highly suitable for operating in extreme temperatures. The device is capable of operating up to 175°C when air-cooled.
The TLZ4V7B-GS08 diode features a low, 4.75V breakdown voltage, making it ideal for low voltage applications, and is available in a SOT-23 package, making it highly suitable for surface mount applications. It also features a fast switching speed of 5 mA/µs and reverse power dissipation of 50uW, making it suitable for switching circuits requiring high speed operation.
The TLZ4V7B-GS08 diode is composed of two parts; the pn junction and the Zener region. When the anode voltage is positive compared to the cathode, the diode is said to be in forward-bias. The Zener region is a heavily doped semiconductor area of the diode which allows the junction to breakdown and conduct current in the reverse direction when an overvoltage is applied. The pn junction and the Zener region together act to resistor regulate the voltage applied to the circuit.
In summary, the TLZ4V7B-GS8 is a single Zener diode specially designed for low voltage and low power switching circuits. It features a maximum power dissipation of 500mW and reverse leakage current of 0.2mA and has an operating temperature range between -65 and 175°C. It has an fast switching speed of 5 mA/µs and reverse power dissipation of 50uW. The device is composed of two parts; the pn junction and the Zener region, which together act to resistor regulate the voltage applied to the circuit. This makes it highly suitable for low voltage applications such as in automotive electronics.
The specific data is subject to PDF, and the above content is for reference
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