TLZ4V7C-GS08 Allicdata Electronics
Allicdata Part #:

TLZ4V7C-GS08-ND

Manufacturer Part#:

TLZ4V7C-GS08

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 4.7V 500MW SOD80
More Detail: Zener Diode 4.7V 500mW Surface Mount SOD-80 MiniM...
DataSheet: TLZ4V7C-GS08 datasheetTLZ4V7C-GS08 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.7V
Tolerance: --
Power - Max: 500mW
Impedance (Max) (Zzt): 25 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Description

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TLZ4V7C-GS08 is one of the single zener diodes from Lite-On, which ensures a robust and standards-compliant performance. With its anode and cathode connected to the ends of the row and its body connected to the middle pin, the TLZ4V7C-GS08 consists of three leads in a small-package SOT89-4. It also has a widely applied voltage range from 4.7 V to 12 V, a maximum rated power of 500 mW, and an approximate zener impedance of 90 Ω.

Application Field

TLZ4V7C-GS08 is commonly used in many applications such as EMC designs, DC/DC regulators, voltage references, voltage clippers, rectifiers, and current limiters. It is widely used in the telecom and automotive industry due to its excellent reliability and high performance. TLZ4V7C-GS08 also can provide voltage regulation; over current protection; reverse current protection; and temperature coefficients.

Working Principle

TLZ4V7C-GS08 operates through the mechanism of the Zener effect and the avalanche breakdown. It is essentially a low-resistance forward-biased p-n junction diode. When the forward current flows through the diode, it creates a built-in electric field across the diode junction. If the diode is reverse-biased, the electric field across the p-n junction will collapse. When the reverse voltage across the diode increases above the breakdown or Zener voltage, the breakdown current increases exponentially due to the avalanche effect, resulting in a high reverse current.

Unlike regular diodes, TLZ4V7C-GS08 also has a Zener breakdown effect. This effect occurs when the reverse voltage across the diode exceeds the Zener voltage and breakdown current begins to flow. Therefore, the Zener breakdown allows the diode to regulate, redirect, or dissipate the excess voltage and current while allowing the current to continue to flow.

Conclusion

TLZ4V7C-GS08 is a single zener diode from Lite-On, with a wide operating voltage range and multiple applications. It works via the Zener effect and the avalanche breakdown and operates as a low-resistance forward-biased p-n junction diode. With its excellent reliability and excellent performance, the TLZ4V7C-GS08 is an ideal choice for various applications such as EMC designs, voltage regulators, voltage clippers, and current limiters.

The specific data is subject to PDF, and the above content is for reference

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