Allicdata Part #: | TM3B685M020CBA-ND |
Manufacturer Part#: |
TM3B685M020CBA |
Price: | $ 0.21 |
Product Category: | Capacitors |
Manufacturer: | Vishay Sprague |
Short Description: | TM3685M020BCBA |
More Detail: | 6.8µF Molded Tantalum Capacitors 20V 1411 (3528 Me... |
DataSheet: | TM3B685M020CBA Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
2000 +: | $ 0.18509 |
Series: | TANTAMOUNT®, TM3 |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Capacitance: | 6.8µF |
Tolerance: | ±20% |
Voltage - Rated: | 20V |
Type: | Molded |
ESR (Equivalent Series Resistance): | 2.5 Ohm |
Operating Temperature: | -55°C ~ 125°C |
Lifetime @ Temp.: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 1411 (3528 Metric) |
Size / Dimension: | 0.138" L x 0.110" W (3.50mm x 2.80mm) |
Height - Seated (Max): | 0.083" (2.10mm) |
Lead Spacing: | -- |
Manufacturer Size Code: | B |
Features: | High Reliability |
Failure Rate: | -- |
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Tantalum capacitors are a type of electrolytic capacitor consisting of two layers of material called an anode and a cathode. These two layers are separated by a dielectric material, usually Tantalum Pentoxide, that allows electric charge to flow between them. The type of Tantalum capacitor most widely used in electronic applications is the tantalum-manganese dioxide (TMD) type.
The TM3B685M020CBA is a polarized, axial-leaded, surface-mountable, Tantalum-Manganese Dioxide capacitor, which is widely used in many electronic applications due to its high capacitance, low equivalent series resistance (ESR) and enhanced temperature performance. It has a rated DC operating voltage of 6.3 volts, a capacitance of 685 μF and an ESR of 20 mΩ, and is available in a range of case sizes from 0603 to 2225.
The TM3B685M020CBA is generally utilized in decoupling, buffer and filtering applications, where the device is required to provide a low impedance supply of energy to sensitive circuits. It can also be used as a power source to fund the operational amplifiers and voltage regulators. Its small case size allows it to be used in tight spaces, and its low ESR is ideal for improved efficiency and low noise performance. Furthermore, the capacitor is designed to offer enhanced thermal stability, which makes it suitable to be used in low voltage DC-DC converters and switching power supplies.
The working principle behind the TM3B685M020CBA capacitor is that, when a voltage is applied to the terminals, the positive anode is attracted to the negative cathode and a layer of positive charges build up on the anode and a layer of negative charges build up on the cathode. This charged layer, or dielectric, creates an electric field within the capacitor, giving the capacitor the ability to store electrical energy. When an electric current flows through the capacitor, it takes an amount of time for this charge to build up, which is referred to as the time constant of the capacitor. This time constant is an important metric as it can dictate the performance of the capacitor and the overall effective output of the application it is used in.
In summary, the TM3B685M020CBA is a type of Tantalum-Manganese Dioxide capacitor which is featured most prominently in decoupling, buffering, and filtration applications, as well as in low voltage DC-DC converters and switching power supplies. It has a rated DC operating voltage of 6.3 volts, a capacitance of 685 μF and an ESR of 20 mΩ, and is available in a range of case sizes from 0603 to 2225. The working principle behind the TM3B685M020CBA is that, when a voltage is applied to the terminals, the positive anode is attracted to the negative cathode and a layer of positive charges build up on the anode and a layer of negative charges build up on the cathode. This charged layer, or dielectric, creates an electric field within the capacitor, granting it the ability to store electrical energy.
The specific data is subject to PDF, and the above content is for reference
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