TMMDB3TG Allicdata Electronics

TMMDB3TG Discrete Semiconductor Products

Allicdata Part #:

497-14752-2-ND

Manufacturer Part#:

TMMDB3TG

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: DIAC 30-34V 2A MINIMELF
More Detail: Diac/Sidac Thyristor 30 ~ 34V 2A Mini MELF
DataSheet: TMMDB3TG datasheetTMMDB3TG Datasheet/PDF
Quantity: 1000
2500 +: $ 0.13642
5000 +: $ 0.12762
12500 +: $ 0.11882
25000 +: $ 0.11266
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Breakover: 30 ~ 34V
Current - Breakover: 15µA
Current - Peak Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Package / Case: DO-213AA
Supplier Device Package: Mini MELF
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Thyristors – DIACs, SIDACs are widely used as a power circuit component of power supplies and circuits with control functions, and as a triggering component in a control circuit. The TMMDB3TG is a three-terminal semiconductor device used for controlling the current or the operating voltage with a predetermined voltage or current level. It consists of two semiconductor bodies joined by an insulation layer, one of which is the anode and the other is the cathode. The TMMDB3TG has a thick heavily-doped P-layer sandwiched between two N-layers.

The application field of TMMDB3TG can be seen in a wide range of fields, including medical equipment, communications and information systems, computers, consumer electronics products, automotive electronic products, and even home appliance control systems. It is often used for power supplies and circuit components with control functions, such as voltage and current regulating, power switches, adjustable speed regulators, attenuators, switching regulators, and analog to digital converters.

The working principle of TMMDB3TG is based on the function of the PN junction formed by two opposing semiconductor bodies, through which applied voltage and current can be adjusted. When the anode and cathode are connected to the proper power supply, electrons will flow through the P-layer. As the current through the TMMDB3TG increases, the potential difference between the anode and the cathode will cause the current to reduce and the voltage drop to rise. This mechanism allows for the precise and repeatable control of voltage and current for various applications.

The TMMDB3TG device is also used as a gate control component in the control circuit. When applying a suitable base voltage to the device, the device can switch rapidly from the off state to the on state, controlling the conduction of current in the circuit. The TMMDB3TG can be used as an AC or DC power control component, with different types available for both applications.

Overall, TMMDB3TG is an essential component in a wide range of applications, including consumer electronics, medical equipment, communications and informations systems, computers, automotive electronics, and home appliance control systems. It is used for power supplies and circuit components with control functions such as voltage and current regulating, power switches, adjustable speed regulators, attenuators, switching regulators and analog to digital converters. This device can also be used in control circuits to provide fast switching and current control.

The specific data is subject to PDF, and the above content is for reference

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