TN2010H-6G-TR Discrete Semiconductor Products |
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Allicdata Part #: | 497-17750-2-ND |
Manufacturer Part#: |
TN2010H-6G-TR |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | HIGH TEMPERATURE 20A SCRS |
More Detail: | SCR 600V 20A Sensitive Gate Surface Mount D²PAK |
DataSheet: | TN2010H-6G-TR Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.28974 |
2000 +: | $ 0.27042 |
5000 +: | $ 0.25690 |
10000 +: | $ 0.24724 |
25000 +: | $ 0.23951 |
Specifications
Current - On State (It (RMS)) (Max): | 20A |
Supplier Device Package: | D²PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
SCR Type: | Sensitive Gate |
Current - Non Rep. Surge 50, 60Hz (Itsm): | 197A, 180A |
Current - Off State (Max): | 5µA |
Current - Hold (Ih) (Max): | 40mA |
Series: | -- |
Current - On State (It (AV)) (Max): | 12.7A |
Voltage - On State (Vtm) (Max): | 1.6V |
Current - Gate Trigger (Igt) (Max): | 10mA |
Voltage - Gate Trigger (Vgt) (Max): | 1.3V |
Voltage - Off State: | 600V |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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Thyristors - SCRs (Silicon-Controlled Rectifiers) are special types of diode with one gate that can be used to turn the diode on and off. The TN2010H-6G-TR is a class of device that uses a four-layer thyristor and is used in a variety of applications.The TN2010H-6G-TR is a pulse-trigger thyristor that is used to control higher power demand in many applications. These devices can be triggered by an external pulse and used in an AC circuit or thyristor firing circuit. They are used as power switches and regulators, as well as in switching mode power supplies.The pulses to trigger the thyristor can be either positive or negative polarity and the length of the burst is adjustable. This allows for the control of high current or voltage, and the ability to switch between two different states. For example, if a circuit requires a device to be switched on and off at regular intervals, the TN2010H-6G-TR can be used to accomplish this.The TN2010H-6G-TR utilizes a four-layer construction with a P type silicon body and N type silicon emitter and collector. The gate is an isolated layer that is insulated from the other layers. When the thyristor receives the triggering signal, its gate begins to conduct, which then allows the N-type emitter and collector to conduct, thus allowing the current to flow. Since the gate voltage must be higher than the emitter voltage in order to turn on the thyristor, the gate bias must be synchronised with the other voltages in the circuit. Once the device is triggered, it will remain in the on state even when the triggering signal has stopped. Therefore, a reverse bias must be applied to turn off the device. This can be done by removing the forward voltage or introducing a reverse voltage. These special devices are used in a variety of applications, including motor control, AC power control, and in switched-mode power supplies. In motor control applications, the thyristor can be used to control the motor’s speed and torque. It is also used in AC circuits to switch on and off loads in synchronisation with the AC current. In switched-mode power supplies, the TN2010H-6G-TR is used to switch between different power levels. Since the device can switch between two states, it is ideal for applications that require fast switching between different power levels. The TN2010H-6G-TR is a reliable device that offers a wide range of features and can be used in a variety of applications. Its ability to switch between two different states makes it ideal for applications where power levels have to be controlled at different intervals.
The specific data is subject to PDF, and the above content is for reference
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