TN2010H-6T Allicdata Electronics
Allicdata Part #:

497-17751-ND

Manufacturer Part#:

TN2010H-6T

Price: $ 0.67
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: HIGH TEMPERATURE 20A SCRS
More Detail: SCR 600V 20A Sensitive Gate Through Hole TO-220AB
DataSheet: TN2010H-6T datasheetTN2010H-6T Datasheet/PDF
Quantity: 1976
1 +: $ 0.60480
10 +: $ 0.54180
100 +: $ 0.42242
500 +: $ 0.34893
1000 +: $ 0.27547
Stock 1976Can Ship Immediately
$ 0.67
Specifications
Series: --
Part Status: Active
Voltage - Off State: 600V
Voltage - Gate Trigger (Vgt) (Max): 1.3V
Current - Gate Trigger (Igt) (Max): 10mA
Voltage - On State (Vtm) (Max): 1.6V
Current - On State (It (AV)) (Max): 12.7A
Current - On State (It (RMS)) (Max): 20A
Current - Hold (Ih) (Max): 40mA
Current - Off State (Max): 5µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 197A, 180A
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Thyristors - SCRs, also known as Silicon Controlled Rectifiers, are a type of semiconductor composed of four layers of alternative and equal-concentrated semiconductor materials. Although the basic structure of SCRs is similar to a diode, SCRs contain extra N-type junction which enables them to be triggered only by the current signal into their gates and then remain in the on-state after the current has stopped flowing. This property makes SCRs very efficient in controlling electrical power, which makes them suitable for many applications in industry, such as lighting control, welding, switching power supplies, etc.

The TN2010H-6T, a type of SCR manufactured by CCI, is a high-performance power switching devices designed for lighting control, switching power supplies, and communications systems. The TN2010H-6T is optimized for ease of use and high performance in a wide range of applications. It is designed with a high-level of on-state voltage and moderate gate current for a smooth and reliable switching operation.

The TN2010H-6T features a low-resistance emitter structure which allows for smooth operation over the entire temperature range and provides a higher degree of precision when controlling high-power circuits. The TN2010H-6T also utilizes a low gate resistance structure which result in a more efficient switching operation and less switching noise in the device. It also facilitates easy on/off switching, as well as decreased power consumption due to its low voltage drop.

The TN2010H-6T is a three-terminal device that is made up of a gate, an anode, and a cathode. The gate is connected to the positive voltage supply and controls the state of the device. The anode is the positive terminal of the SCR, and the cathode is the negative terminal. When the voltage on the gate reaches a certain point, the TN2010H-6T will turn on, allowing current to flow from the anode to the cathode. The current will remain until the gate voltage is removed or falls below the turn-on level.

The TN2010H-6T is designed for use in applications such as lighting control, switching power supplies and communications systems. It is also suitable for use in general-purpose power switching applications and motor speed control. Due to its capability of withstanding high inrush currents and surges, the TN2010H-6T is often used in applications that require a fast and reliable response to a wide range of input signals. The high-level of on-state voltage and moderate gate current is also beneficial in motor speed control and lighting control applications.

In summary, the TN2010H- 6T is a high-performance power switching device that is suited for a wide range of applications. It is capable of withstanding high inrush currents and surges, and is designed with a high level of on-state voltage and moderate gate current for smooth and reliable switching operations. Additionally, the low-resistance emitter structure and low gate resistance structure provide a more efficient and reliable switching operation and less switching noise in the device. Because of this, the TN2010H-6T is a very useful device for power switching applications.

The specific data is subject to PDF, and the above content is for reference

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