TPD2S703QDGSRQ1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transient-Voltage Suppression (TVS) Diodes, or "Transient Voltage Suppressors", are components used to protect electrical power systems from catastrophic disruption due to power spikes or other anomalies. The TPD2S703QDGSRQ1 is a complex TVS diode made from a combination of technologies called Mixed Technology. It provides an effective barrier against power surges without sacrificing speed and accuracy.

The TPD2S703QDGSRQ1 integrates both silicon-on-sapphire (SOS) technology and hyperabrupt-avalanche-phase-shift (APS) technology. The result is a device with both extraordinary protection and high capability. SOS technology is constructed from a thin layer of silicon deposited on a sapphire substrate, providing an electric field that enhances current drive and minimizes power loss of the device. It also has a high-temperature, low-power threshold that is highly durable and long lasting.

APS technology, on the other hand, offers an impressive reverse avalanche breakdown voltage, a fast response time, and superior stability over operating temperature changes. It also boasts an impressive ability to protect against high-voltage, short-duration transients caused by electrostatic discharge (ESD).When these two technologies are combined in the TPD2S703QDGSRQ1 device, it provides one of the most advanced and reliable transient protection solutions on the market.

The working principle of the TPD2S703QDGSRQ1 is based on the concept of preventing the surge or short by imposing a voltage limit across the device. When an inbound voltage is detected, the TPD2S703QDGSRQ1 device works by clamping the voltage to a safe level, allowing the current to travel in a single direction. This current is then routed away to a safe location where it dissipates into the environment.

The TPD2S703QDGSRQ1 is designed to be used in high-speed applications in the medical, automotive, and industrial sectors. Its fast response time and robust protection make it ideal for applications that require protection against surges and spikes. In addition, its small size makes it a great option for limited space applications, as it can be integrated into small circuits or devices without causing any additional congestion.

Overall, the TPD2S703QDGSRQ1 is an excellent example of the superior protection and capabilities that can be achieved with Mixed Technology. Its combination of silicon-on-sapphire (SOS) and hyperabrupt-avalanche-phase-shift (APS) technologies allows it to providehigh-quality performance and superior transient protection in the most demanding applications.

The specific data is subject to PDF, and the above content is for reference