TPD2S017DBVR Circuit Protection |
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Allicdata Part #: | 296-25216-2-ND |
Manufacturer Part#: |
TPD2S017DBVR |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Texas Instruments |
Short Description: | IC ESD SOLUTION 2CH SOT23-6 |
More Detail: | N/A |
DataSheet: | TPD2S017DBVR Datasheet/PDF |
Quantity: | 2 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Voltage - Clamping: | 11V |
Technology: | Mixed Technology |
Number of Circuits: | 2 |
Applications: | General Purpose |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 |
Supplier Device Package: | SOT-23-6 |
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TPD2S017DBVR is an advanced voltage protection device for data lines, which is widely used in various industries, such as consumer electronic application, automotive application, and industrial application. It supports very low capacitance and ultra-low clamping voltage, which provide high immunity against for making system from transient current damage.
The TPD2S017DBVR also offers advanced protection for sensitive electronics against various threats, such as mechanical shock, electrical overstress, and electrostatic discharge. This device is also designed with low operating power, low capacitance, very low current leakage, and low capacitance-voltage (C-V) relationship, which allow it to protect important components from voltage spikes due to external transients.
The main principle of the TPD2S017DBVR is that it acts as a high-speed voltage trigger device. The device has two parts, a gate-to-source diode and a circuit with two active elements, MOSFETs connected in series. The device has two states: a conducting state, in which the drain voltage of the MOSFETs is below the gate voltage and the device is in the protection mode; and a non-conducting state, in which the drain voltage is higher than the gate voltage and the device is not conducting.
When the TPD2S017DBVR is turned on, its gate-to-source diode begins to close, and the MOSFETs voltage starts to increase. When the voltage reaches a certain level, the MOSFETs become conductive and switch on. At this point, the device is in its protection state and the voltage spike is clamped below the maximum tolerated value of the target system. The device is then turned off when the voltage spike subsides, allowing normal system operation to resume.
TPD2S017DBVR is a type of mixed technology product, which integrates the advantages of both transistors and diodes. Because of its low capacitance, it is particularly suitable for use in portable electronics and consumer applications. In addition, it provides excellent data line protection, where its low capacitance can reduce the electromagnetic interference and improve the signal quality. It also features reverse polarity protection, making it ideal for use in situations where abrupt changes in voltage may occur.
In conclusion, TPD2S017DBVR is a very useful device that combines Transil and MOSFETs technology for providing data line protection. The device offers excellent protection against transient overvoltages, and also features a very low capacitance-voltage relationship and reverse polarity protection. As such, it is widely applicable for various applications such as consumer electronic application, automotive application, and industrial application.
The specific data is subject to PDF, and the above content is for reference
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