TPD2EUSB30ADRTR Circuit Protection

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TVS-diodes (Transient Voltage Suppression Diode) are combinations of semiconductor materials and surface mount technology (SMT). They offer enhanced protection against electrical transients caused by lightning and electrostatic discharge (ESD). The TPD2EUSB30ADRTR is one such TVS diode.

The TPD2EUSB30ADRTR is specifically designed to protect SuperSpeed USB™ (USB3.0 and USB3.1) devices from electrical transients. It provides bidirectional protection in multiple signal-pair designs and offers a low clamping voltage. It is also highly reliable and is UL 94V-0 compliant. The diode has high temperature plastic encapsulated (HTP) features that ensure it can withstand high ambient temperatures of up to 175°C. It also offers fast response time for short circuits and a rated peak pulse power of2500 W (10/1000 μs).

The TPD2EUSB30ADRTR also allows for improved power management and delivers superior ESD protection without any performance degradation or data errors. It can also protect system components when used in combination with external conditioning circuits. Additionally, the TPD2EUSB30ADRTR can be used in applications that require high transient pulse power such as Ethernet ports, motor controls, and other industrial circuitry.

The TPD2EUSB30ADRTR operation is based on the principle that when a high voltage is applied, it produces a current spike that is proportional to the applied voltage. This current spike is then rectified and converted into a voltage pulse that is clamped at a predetermined level to protect the underlying circuit. This current spike is generated when the circuit experiences a transient voltage surge, and is then rectified into a voltage pulse to provide electrical protection.

The TPD2EUSB30ADRTR is an ideal solution for sensitive devices that need to be protected from voltage fluctuations. It is designed to provide reliable protection and improved power management for USB ports in multiple signal-pair designs. It provides fast response time and a low clamping voltage to effectively reduce the effects of transients and ESD.

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