TPS2829DBVT

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Driven Configuration:	Low-Side
Channel Type:	Single
Number of Drivers:	1
Gate Type:	N-Channel MOSFET
Voltage - Supply:	4 V ~ 14 V
Logic Voltage - VIL, VIH:	1V, 4V
Current - Peak Output (Source, Sink):	2A, 2A
Input Type:	Non-Inverting
Rise / Fall Time (Typ):	14ns, 14ns
Operating Temperature:	-40°C ~ 125°C (TA)
Mounting Type:	Surface Mount
Package / Case:	SC-74A, SOT-753
Supplier Device Package:	SOT-23-5
Base Part Number:	TPS2829

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Introduction

TPS2829DBVT is a high-efficiency, high-performance gate driver that provides drive current to the gate of the power converter MOSFETs. It can handle peak currents up to 3A and is capable of driving high-voltage N-Channel and P-Channel enhancement mode MOSFETs. It is ideal for a wide range of applications such as solar, wind, data communication and automotive applications.

Application Field

The TPS2829DBVT can be used in a variety of applications including:

• Solar Power: In solar applications, the TPS2829DBVT can be used to drive the power MOSFETs that provide the energy conversion from the solar panel to other energy forms required by the system. The high efficiency of the device ensures that less energy is lost during the conversion process.
• Wind Power: In wind power systems, the TPS2829DBVT allows for a faster and more efficient switching of the power MOSFETs that control the operation of the wind turbine. This ensures that the turbine can operate at a maximum level of efficiency, increasing its energy production capabilities.
• Data Communication: The TPS2829DBVT can be used to drive the signal switching MOSFETs in data communication systems. The high efficiency of the device can ensure that the signals are accurately transmitted, increasing the overall reliability of the system.
• Automotive Applications: In automotive applications, the TPS2829DBVT can be used to power the junction field effect transistors (JFETs) that provide the drive current for a variety of automotive applications such as power steering, engine management, and airbag control systems. The high efficiency of the device can ensure that the systems operate more efficiently.

Working Principle

The TPS2829DBVT is a high-efficiency, high-performance gate driver that is capable of driving either N-channel or P-channel MOSFETs. It has a powerful integrated gate drive circuit with a high peak output current of up to 3A. The gate driver has a gate voltage range of 0V to VDD and can drive gates of up to 40V voltage with a maximum VGS of 10V.The device works by providing a fixed output voltage proportional to its input signal on the VDD pin. It also provides a separate power supply on the VSG pin which is used to drive the gate of the MOSFETs. The VDD and VGS pins can be independently managed by the user, allowing for precise control over the current driven to the gate of the MOSFETs.In addition, the device features an integrated dead time protection circuit. This circuit prevents the MOSFETs from being damaged by the simultaneous switching of both N-channel and P-channel MOSFETs. It also prevents current short-circuiting caused by the reverse recovery of a diode connected to the source of the MOSFETs.

Conclusion

The TPS2829DBVT is an efficient, flexible and powerful gate driver that is ideal for a wide range of applications. Its high-efficiency and high-current capabilities make it an ideal choice for powering both N-channel and P-channel MOSFETs. It has a wide VDD and VGD range as well as an integrated deadtime protection circuit, making it an ideal power management device.

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