TSPB10U45S S2G Allicdata Electronics
Allicdata Part #:

TSPB10U45SS2G-ND

Manufacturer Part#:

TSPB10U45S S2G

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE SCHOTTKY 45V 10A SMPC4.0
More Detail: Diode Schottky 45V 10A Surface Mount SMPC4.0
DataSheet: TSPB10U45S S2G datasheetTSPB10U45S S2G Datasheet/PDF
Quantity: 1000
12000 +: $ 0.25693
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 460mV @ 10A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 300µA @ 45V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: SMPC4.0
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Diodes are an essential component of many electronic circuits, used in rectification and switching applications. Rectifying diodes are one of the simplest semiconductor devices and are used to convert alternating current to direct current. The TSPB10U45S S2G (SOT23 5-pin Power DIP) is a single rectifier diode that offers low forward voltage drop, low leakage current and low capacitance options.

The TSPB10U45S S2G is a low voltage, high current frequency device that can be used in applications such as battery charging and protection, DC-DC converters, server power supplies and industrial power supplies. The device can be used for high frequency rectification, as it features an ultra-low forward voltage drop of 0.45V max at 1A and fast switching performance.

The TSPB10U45S S2G is made up of a P-type semiconductor layer sandwiched between two N-type layers. A layer of aluminum is deposited on the top and bottom of the semiconductor, forming a PN junction between the two layers. This junction is the key to the diode\'s function.

When the PN junction is forward biased, meaning the positive voltage is placed on the P type layer and the negative voltage is on the N type layer, the junction creates a path for current to flow, effectively allowing current to “flow” through. The forward biased junction is also known as a rectifying junction, as it allows current to flow from one side of the junction to the other but not in the opposite direction.

When a sufficient reverse voltage is applied to the PN junction, the capacity of the junction decreases and current does not flow, creating a reverse bias condition. This condition will cause the junction to block the flow of current from one side to the other, and is why the diode is used in switching and protection circuits.

The TSPB10U45S S2G, like other rectifying diodes, is used in applications to convert an AC signal to a DC signal. This is done by connecting the anode of the diode to the positive voltage connection, and the cathode of the diode to the ground connection. This creates a forward biased current path, which allows the current to flow through and be converted to a DC signal.

The TSPB10U45S S2G is also used as a protection device. If the voltage applied to the PN junction is of the wrong polarity, the diode will switch off, blocking the current from flowing through. This protection function can be seen in power supplies, where the diode will block any current flow from the output of the power supply to the input.

Overall, the TSPB10U45S S2G is a single rectifier diode that offers the user low forward voltage drop and fast switching performance. The device is used to convert an AC signal to a DC signal, and can also be used in switching and protection circuits. The device is an essential component in many electronic circuits and is widely used in industrial power supplies, server power supplies, DC-DC converters, battery charging and protection applications.

The specific data is subject to PDF, and the above content is for reference

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