TSPB5H120S S1G

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Introduction

TSPB5H120S S1G is a Diode-Rectifier manufactured by STMicroelectronics. It is a single-phase dioide-rectifier with an integrated Low VF (forward voltage drop) transistor. This device is suitable for high efficiency electrical applications such as DC/DC converters, AC/DC converters, industrial battery chargers and many other applications.

Application Field

The TSPB5H120S S1G can be used in high current applications such as AC/DC converters, DC/DC converters and battery chargers. It is suitable for applications in motor control, power conditioning, and power factor transformers.

Specifications

The device has a maximum forward voltage drop of 0.6V, maximum reverse voltage of 60V, maximum average forward current of 5A, and a total power dissipation of 140W. The device is rated for an operating temperature range of -55° C to 150° C.

Working Principle

The TSPB5H120S S1G works by using a p-n junction semiconductor to create an electrical rectification process. The p-n junction is formed by two semiconductor layers, with one layer having an excess of positive charge and the other layer having an excess of negative charge. When a voltage is applied to the p-n junction, a potential barrier is created which prevents current from flowing in the reverse direction. This process is known as rectification, which is the conversion of AC current to DC current.

Conclusion

The TSPB5H120S S1G is a single-phase diode-rectifier with integrated low VF transistor, suitable for many electrical applications. It is an efficient device with a maximum forward voltage drop of 0.6V, maximum reverse voltage of 60V, maximum average forward current of 5A, and a total power dissipation of 140W. The device works by using a p-n junction semiconductor to create an electrical rectification process, which is the conversion of AC current to DC current.

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