TZM5235F-GS08

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Diodes - Zener - Single

The TZM5235F-GS08 is a Zener diode designed for use in reverse bias applications. It has a P-N junction, which is a semiconductor device that is used to control the flow of electricity. This diode can be used in many applications, such as voltage regulation and overvoltage protection.

Features

The TZM5235F-GS08 has a breakdown voltage of 5.4V, a power dissipation of 0.5W, and a peak reverse power dissipation of 205mW. It also has a surge current rating of 5A. The maximum junction temperature is 150°C and the operating temperature range is between -55°C and +150°C. Its storage and operating temperature ranges are -55°C to +150°C.

This diode has a small packaging size of 8.5mm x 2.8mm and an ideally suited for use in space constrained applications. It has an epoxy conformal coating for protection and is RoHS compliant. The device is constructed of a silicon die and an anode/cathode layer for structure that is encapsulated in an epoxy resin for protection.

Applications

The TZM5235F-GS08 is widely used in many applications, such as voltage regulation, overvoltage protection, automotive lighting, and data communications. It can be used as a backup device in a power supply, protecting the components from damage due to voltage spikes. It is also widely used in automotive lighting applications, as it helps to regulate voltage and maintain brightness. It is also used in data communications to prevent overvoltage damage to sensitive electronics.

Working Principle

The TZM5235F-GS08 functions by using the P-N junction in reverse bias. When the voltage is reversed across the P-N junction, a depletion zone is formed. This zone is filled with negatively charged ions on the N-side and positively charged ions on the P-side. Together, these ions act as a barrier, preventing current from flowing too quickly or easily.

As the voltage increases, the depletion region around the junction increases and becomes thinner. The threshold point is reached when the applied voltage is just strong enough to penetrate the barrier, allowing current to flow from the N-side to the P-side of the junction. This is known as the breakdown voltage. The TZM5235F-GS08 has a breakdown voltage of 5.4V, meaning that it conducts current when the voltage reaches that level.

Once current starts flowing, the device quickly stabilizes, limiting the current to a certain level. This is known as the knee voltage and is much lower than the breakdown voltage. The device then functions like a closed circuit, allowing current to flow, but limiting the amount of current to a safe level. When the voltage reaches a level that is too high, the TZM5235F-GS08 will shut down, preventing damage to the components.

Advantages

The main advantages of using a TZM5235F-GS08 are its small size and its ability to protect sensitive components from overvoltage damage. Its small size makes it ideal for use in space-constrained applications, allowing it to be easily fitted into existing systems with no or minimal modifications. It also has an epoxy conformal coating for protection, making it suitable for use in harsh or corrosive environments. Finally, it has a low knee voltage and a high breakdown voltage, making it an ideal choice for voltage regulation and protection.

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