TZM5237F-GS18 Allicdata Electronics
Allicdata Part #:

TZM5237F-GS18-ND

Manufacturer Part#:

TZM5237F-GS18

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER SOD80
More Detail: Zener Diode 8.2V 500mW Surface Mount SOD-80
DataSheet: TZM5237F-GS18 datasheetTZM5237F-GS18 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 8.2V
Tolerance: --
Power - Max: 500mW
Impedance (Max) (Zzt): 500 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 6.5V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80
Description

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Diodes - Zener - Single

The TZM5237F-GS18 is a type of diode with an important application in electronic circuit design. This diode is a Zener-type diode, meaning it is a specialized type of diode with a reversed breakdown voltage. This voltage makes it an ideal choice for applications in which voltage regulation or signal modulation is desired.

Application Field

The TZM5237F-GS18 is an ideal choice for voltage regulation applications. It can handle up to 200mA of current, making it suitable for use in high power applications. It is also suitable for use in signal modulation applications, such as radio frequency (RF) signal control. Additionally, the diode can also be used in low power applications, such as low noise level electronics.

The TZM5237F-GS18 is a versatile choice for applications where it is desired to regulate voltage or modulate signals. It is an ideal choice for applications where high power is necessary, as well as those requiring low noise levels. The diode is also suitable for a variety of other uses, such as temperature control and test equipment.

Working Principle

The working principle of the TZM5237F-GS18 is based on its reversed breakdown voltage. When current is applied to the diode, electrons are forced to move through the diode. As the electrons run through the diode, they encounter a barrier known as the "Zener voltage". When the voltage exceeds the breakdown voltage, the barrier is broken and the electrons are allowed to flow freely.

The reversed breakdown voltage of the TZM5237F-GS18 acts to regulate the current allowed to pass through it, meaning it is a voltage-limiting device. This voltage-limiting characteristic is useful in applications in which it is desired to control excess voltage, such as signal modulation or voltage regulation applications. There is a wide range of voltage range available, making the TZM5237F-GS18 an ideal choice for a variety of applications.

It is also worth noting that the diode is a low noise device. This means that when it is used in applications with high noise levels, it will not contribute to the noise. Additionally, the diode is able to handle high current levels, making it suitable for use in high power applications.

In conclusion, the TZM5237F-GS18 is an ideal choice for applications in which voltage regulation or signal modulation is desired. It is a versatile diode with a reversed breakdown voltage that allows it to be used in a variety of different applications. Additionally, the diode is a low noise device and is able to handle high current levels, making it an ideal choice for high power applications.

The specific data is subject to PDF, and the above content is for reference

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