TZM5238B-GS18 Allicdata Electronics
Allicdata Part #:

TZM5238B-GS18-ND

Manufacturer Part#:

TZM5238B-GS18

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 8.7V 500MW SOD80
More Detail: Zener Diode 8.7V 500mW ±5% Surface Mount SOD-80 Mi...
DataSheet: TZM5238B-GS18 datasheetTZM5238B-GS18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01852
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 8.7V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 6.5V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Description

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A Zener diode is a specific type of diode designed to operate in the breakdown region of reverse biased operation - when the diode is connected in reverse bias, the electric field applied to the diode causes it to enter a state of conductivity.

The TZM5238B-GS18 is a single Zener diode manufactured by Vishay Semiconductors and is specifically designed for applications such as voltage regulation and waveform shaping. The device has a maximum operating power rating of 1 watt and a maximum repetitive peak reverse voltage rating of 18 volts.

The TZM5238B-GS18 has a specified Zener breakdown voltage of 17.5 volts, indicating the voltage across the diode at which it will breakdown and enter the region of reverse current flow. In other words, when the voltage across the diode exceeds 17.5 volts, the diode “breaks down”, allowing the current to flow in reverse. The Zener voltage tolerance of TZM5238B-GS18 is ±5%, meaning that the actual Zener breakdown voltage can vary from 16.6 volts to 18.45 volts.

The forward voltage of the device is specified as 1.2 volts and the maximum Zener current is rated at 75 mA. The TZM5238B-GS18 is also specified with a capacitance rating of 11.5 pF between the anode and cathode which indicates the AC coupling of the diode. The capacitance is dependent on the reverse bias voltage which will reduce the capacitance as the reverse bias voltage increases.

The TZM5238B-GS18 is designed for applications such as voltage regulation, waveform shaping, negative voltage generation, and transient voltage suppression. The device can be used as an alternative to conventional Zener diodes such as 1N47 Series. It is designed with a low temperature coefficient that allows it to maintain a stable breakdown voltage over a wide temperature range.

The TZM5238B-GS18\'s working principle involves the application of a reverse bias voltage which, when exceeded, causes the diode to “breakdown”. This breakdown process, also known as Zener breakdown, allows current to flow in the reverse direction which is then used to regulate the voltage in the circuit.

The TZM5238B-GS18 can be used in applications that require the combination of low dynamic impedance, fast response, and control of input voltage. It is suitable for use in voltage regulation circuits, power supplies, DC-DC converters, clamping circuits, and negative voltage generation.

The TZM5238B-GS18 is a single Zener diode designed for voltage regulation and waveform shaping applications. It has a specified Zener breakdown voltage of 17.5 volts and a capacitance rating of 11.5 pF between the anode and cathode. It\'s designed for applications that require the combination of low dynamic impedance, fast response, and control of input voltage.

The specific data is subject to PDF, and the above content is for reference

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