TZMC16-GS18 Discrete Semiconductor Products |
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Allicdata Part #: | TZMC16-GS18GITR-ND |
Manufacturer Part#: |
TZMC16-GS18 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 16V 500MW SOD80 |
More Detail: | Zener Diode 16V 500mW ±5% Surface Mount SOD-80 Min... |
DataSheet: | TZMC16-GS18 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01852 |
30000 +: | $ 0.01667 |
50000 +: | $ 0.01482 |
100000 +: | $ 0.01389 |
250000 +: | $ 0.01235 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 16V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 40 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 12V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | SOD-80 MiniMELF |
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The TZMC16-GS18 is a wide bandgap SiC Zener diode designed to operate in a reverse bias regime and protect against overvoltage. This type of device is commonly found in power conversion and control applications in order to protect against overvoltage, undervoltage, overcurrent, and other transient or environmental variations. It is also used in high-speed data transmission systems, sensor networks, and other industrial applications that require reliable voltage protection.
The forward voltage of the TZMC16-GS18 is 5 V and its leakage current is 1 µA at 75 °C. It is rated for a maximum power dissipation of 400 mW and a working voltage of 11 V. The device uses a reverse breakdown voltage of 16 V and a tight tolerance of ±1.5%. The package size is a small SOD128 package and its junction temperature is rated for a maximum of 175 °C. Its storage temperature is between -55 and +175 °C.
The working principle of the TZMC16-GS18 is relatively simple. When the diode is connected to a voltage source greater than its maximum working voltage of 11 V and the voltage increases beyond the reverse breakdown voltage of 16 V, the diode will begin to conduct. This conduction is reversed when the voltage drops back below the reverse breakdown voltage, effectively protecting the downstream components from overvoltage.
The TZMC16-GS18 can be used in a variety of power applications such as overvoltage protection circuits and voltage clamping circuits. In overvoltage protection circuits, the device can be used to protect against overvoltage from power surges, switching power supplies, and voltage transients. The device can also be used in voltage clamping circuits to provide a limited amount of current and protect the downstream components from overvoltage. Additionally, the device can be used in digital and analog signal conditioning applications as well as sensor networks.
The TZMC16-GS18 is specifically designed to provide excellent reverse breakdown voltage protection in a wide range of applications. Its tight tolerance, excellent power dissipation capability, and high junction temperature rating make it an ideal solution for a variety of power conversion and control applications. The device\'s small package size also makes it an ideal choice for space-constrained applications where reliable voltage protection is required.
The specific data is subject to PDF, and the above content is for reference
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