TZX33B-TR Allicdata Electronics
Allicdata Part #:

TZX33B-TR-ND

Manufacturer Part#:

TZX33B-TR

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 33V 500MW DO35
More Detail: Zener Diode 33V 500mW Through Hole DO-35
DataSheet: TZX33B-TR datasheetTZX33B-TR Datasheet/PDF
Quantity: 1000
30000 +: $ 0.01548
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 33V
Tolerance: --
Power - Max: 500mW
Impedance (Max) (Zzt): 120 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 25V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TZX33B-TR is a single Zener diode type of diode. This diode uses a special temperature-compensated Zener design to provide consistent and reliable performance in a wide range of applications. The TZX33B-TR is able to operate in particular temperatures ranging from -55°C to 125°C. The maximum rated power dissipation is 220mW and the maximum reverse voltage is 33V. This diode is designed in a SOT-23 package that is suitable for space-constrained environments.

The primary application of the TZX33B-TR is in voltage regulation circuits. The Zener breakdown voltage is typically 6.2V which remains relatively stable over temperature ranges. This voltage is suitable for precision voltage adjustment for analog circuitry as well as digital logic circuits. It is also used to provide very reliable overvoltage protection circuits.

The working principle of the TZX33B-TR is similar to any other Zener diode. It is a p-n junction diode with a heavily doped n-type side and heavily doped p-type side. The heavily doped p-type side allows holes to flow easily whereas the heavily doped n-type side allows electrons to be created as they flow across the junction. When the diode is under reverse bias, the electric field increases until the value of the applied voltage reaches the point of Zener breakdown. At this point the electric field is no longer strong enough to prevent current flow across the junction.

The main advantage of the TZX33B-TR compared to other Zener diodes is its temperature compensated design. This ensures that the Zener breakdown voltage remains relatively stable over a wider temperature range. This makes it suitable for use in environments where temperature fluctuations occur, such as automotive applications.

The TZX33B-TR is a reliable and robust device that is suitable for a wide range of applications. It is widely used in voltage regulation circuits as well as overvoltage protection circuits. Its temperature-compensated design ensures that the Zener breakdown voltage remains relatively constant over a wide range of temperatures.

The specific data is subject to PDF, and the above content is for reference

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